MBR1030CT-MBR1060CT
Schottky Barrier Recitifier
PRODUCT SUMMARY
TO-220
TO-220 Plastic-Encapsulate Transistors
FEATURES
Scottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
Very low forward voltage drop
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For use in low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
1
.
ANODE
2. CATHODE
3. ANODE
123
1
Pb-free; RoHS-compliant
ELECTRICAL CHARACTERISTICS
( Tamb =
25
o
C
unless otherwise specified )
Symbol
Characteristic
2
3
MBR
MBR
MBR
MBR
MBR
MBR
1030CT 1035CT 1040CT 1045CT 1050CT 1060CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
PMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
C
=105℃
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load
@ t≤ 2.0µs
Forward Voltage Drop
@ I
F
=5.0A, T
C
=125℃
@ I
F
=5.0A, T
C
= 25℃
@ I
F
=10A, T
C
= 25℃
Peak Reverse Current
at Rated DC Blocking Voltage
@ T
C
= 25℃
@ T
C
=125℃
(JEDEC Method)
Repetitive Peak Reverse Surge Current
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
21
24.5
28
10
31.5
35
42
V
A
30
35
40
45
50
60
V
I
FSM
125
A
I
RRM
0.57
V
FM
0.70
0.84
I
RM
C
j
T
j
, T
STG
1.0
0.70
0.80
0.95
0.1
15
150
-65 to +150
A
V
mA
pF
℃
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
Notes: 1. Thermal resistance junction to case mounted heat sink.
2. Measured at 1.OMHz and applied reverse voltage of 4.0V DC.
01/29/2007 Rev.1.00
www.SiliconStandard.com
1
SSC [ SILICON STANDARD CORP. ]
