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MBR1050 参数 Datasheet PDF下载

MBR1050图片预览
型号: MBR1050
PDF下载: 下载PDF文件 查看货源
内容描述: 肖特基势垒整流器器 [Schottky Barrier Rectifiers]
分类和应用: 二极管局域网
文件页数/大小: 3 页 / 351 K
品牌: SSC [ SILICON STANDARD CORP. ]
 浏览型号MBR1050的Datasheet PDF文件第1页浏览型号MBR1050的Datasheet PDF文件第3页  
MBR10XX SERIES  
TO-263AB(D2PAK)  
Mounting Pad Layout TO-263AB  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(TC=25oC unless otherwise noted)  
Parameter  
Symbol  
MBR1035  
MBR1045  
MBR1050  
MBR1060  
Unit  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
Volts  
Volts  
Volts  
Amps  
Maximum DC blocking voltage  
Maximum average forward rectified current (See Fig. 1)  
IF(AV)  
10  
20  
Peak repetitive forward current (sq. wave, 20KHz)  
at TC=135oC  
IFRM  
IFSM  
Amps  
Amps  
Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
150  
Peak repetitive reverse current at tp = 2.0us, 1KHz  
IRRM  
1.0  
0.5  
Amps  
Voltage rate of change (rated VR)  
dv/dt  
10,000  
V/us  
Maximum instantaneous forward voltage (Note 4)  
at IF=10A, TC=25oC  
-
0.80  
0.70  
0.95  
0.85  
at IF=10A, TC=125oC  
VF  
0.57  
0.84  
0.72  
Volts  
at IF=20A, TC=25oC  
at IF=20A, TC=125oC  
Maximum instantaneous  
reverse current at rated DC  
blocking voltage (Note 4)  
TC=25oC  
0.10  
15  
mA  
IR  
TC=125oC  
Maximum thermal resistance from junction to case  
RθJC  
MBR 2.0 / MBRF 4.0 / MBRB 2.0  
oC/W  
Volts  
4500 (Note 1)  
3500 (Note 2)  
1500 (Note 3)  
RMS Isolation voltage (MBRF type only) from terminals  
to heatsink with t = 1.0 second, RH < 30%  
VISOL  
Operating junction temperature range  
Storage temperature range  
TJ  
-55 to +150  
-55 to +150  
oC  
oC  
TSTG  
Notes:  
1. Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset  
2. Clip mounting (on case), where leads do overlap heatsink  
3. Screw mounting with 4-40 screw, where washer diameter is < 4.9 mm (0.19")  
4. Pulse test: 300us pulse width, 1% duty cycle  
07/28/2007 Rev.1.00  
www.SiliconStandard.com  
2