MBR10XX SERIES
TO-263AB(D2PAK)
Mounting Pad Layout TO-263AB
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(TC=25oC unless otherwise noted)
Parameter
Symbol
MBR1035
MBR1045
MBR1050
MBR1060
Unit
Maximum repetitive peak reverse voltage
Working peak reverse voltage
VRRM
VRWM
VDC
35
35
35
45
45
45
50
50
50
60
60
60
Volts
Volts
Volts
Amps
Maximum DC blocking voltage
Maximum average forward rectified current (See Fig. 1)
IF(AV)
10
20
Peak repetitive forward current (sq. wave, 20KHz)
at TC=135oC
IFRM
IFSM
Amps
Amps
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
150
Peak repetitive reverse current at tp = 2.0us, 1KHz
IRRM
1.0
0.5
Amps
Voltage rate of change (rated VR)
dv/dt
10,000
V/us
Maximum instantaneous forward voltage (Note 4)
at IF=10A, TC=25oC
-
0.80
0.70
0.95
0.85
at IF=10A, TC=125oC
VF
0.57
0.84
0.72
Volts
at IF=20A, TC=25oC
at IF=20A, TC=125oC
Maximum instantaneous
reverse current at rated DC
blocking voltage (Note 4)
TC=25oC
0.10
15
mA
IR
TC=125oC
Maximum thermal resistance from junction to case
RθJC
MBR 2.0 / MBRF 4.0 / MBRB 2.0
oC/W
Volts
4500 (Note 1)
3500 (Note 2)
1500 (Note 3)
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH < 30%
VISOL
Operating junction temperature range
Storage temperature range
TJ
-55 to +150
-55 to +150
oC
oC
TSTG
Notes:
1. Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset
2. Clip mounting (on case), where leads do overlap heatsink
3. Screw mounting with 4-40 screw, where washer diameter is < 4.9 mm (0.19")
4. Pulse test: 300us pulse width, 1% duty cycle
07/28/2007 Rev.1.00
www.SiliconStandard.com
2
SSC [ SILICON STANDARD CORP. ]
