MB2S thru MB10S
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted)
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output rectified current
(see Fig.1)
on glass-epoxy P.C.B.
on aluminum substrate
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Rating for fusing (t < 8.3ms)
Maximum instantaneous forward voltage drop per leg at 0.4A
Maximum DC reverse current at
rated DC blocking voltage per leg
Typical thermal resistance per leg
Typical junction capacitance per leg at 4.0V, 1.0MHz
Operating junction and storage temperature range
T
A
= 25
o
C
T
A
= 125
o
C
Symbols
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
R
θ
JA
R
θ
JA
R
θ
JL
C
J
T
J
, T
STG
MB2S
200
140
200
MB4S
400
280
400
MB6S
600
420
600
0.5
0.8
(1)
(2)
o
MB8S
800
560
800
MB10S
1000
700
1000
Units
Volts
Volts
Volts
Amp
Amps
A
2
se c
Volt
uA
o
35.0
5.0
1.0
5.0
100
85
70
20
(1)
(2)
(1)
C/W
pF
o
13
-55 to +150
C
Notes:
1. On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm) pads
2. On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20mm) mounted on 0.05 x 0.05" (1.3 x 1.3mm) solder pad
12/23/2007 Rev.1.00
www.SiliconStandard.com
2
SSC [ SILICON STANDARD CORP. ]
