LL4148
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise noted.
Parameter
Forward voltage
Leakage current
Capacitance
Voltage rise when switching ON
(tested with 50mA forward pulses)
Reverse recovery time
Rectification efficiency (See third page)
Symbol
V
F
I
R
C
tot
V
f r
t
rr
�
Test Condition
I
F
=10mA
V
R
=20V
V
R
=75V
V
R
=20V, T
J
=150
O
C
V
F
=V
R
=0V
tp=0.1
u
s, Rise time<30
ns
fp=5 to 100kHz
I
F
=10mA, I
R
=1mA
V
R
=6V, R
L
=100
Ω
f=100MHz, V
RF
=2V
Min.
-
-
-
-
-
-
-
0.45
Typ.
-
-
-
-
-
-
-
-
Max.
1.0
25
5.0
50
4.0
2.5
4.0
-
Unit
Volt
nA
uA
uA
pF
Volts
ns
-
Notes:
1. Valid provided that electrodes are kept at ambient temperature
2. Device mounted on FR4 printed-circuit board
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Silicon Standard Corporation or any third parties.
10/1/2006 Rev.4.01
www.SiliconStandard.com
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