EGP10D
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C ambient temperature unless otherwise specified.
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=55
o
C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
@T
A
=25
o
C
@T
A
=125
o
C
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
, T
STG
22.0
50.0
-55 to +150
0.95
5.0
100
50
15.0
o
EGP
10A
50
35
50
EGP
10B
100
70
100
EGP
10C
150
105
150
1.0
30.0
EGP
10D
200
140
200
EGP
10F
300
210
300
EGP
10G
400
280
400
Unit
Volts
Volts
Volts
Amp
Amps
1.25
Volts
uA
nS
pF
C/W
o
Maximum reverse recovery time at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
Typical junction capacitance at 4.0 V, 1 MHz
Typical thermal resistance (Note 1)
Operating junction and storage temperature range
Notes:
C
1. Thermal resistance from junction to ambient at 0.375"(9.5mm) lead length
2. Pulse test: 300us pulse width, 1% duty cycle
07/11/2007 Rev.1.00
www.SiliconStandard.com
2
SSC [ SILICON STANDARD CORP. ]
