B5817W-B5819W
ELECTRICAL CHARACTERISTICS (Tamb=25 oC unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
MAX
UNIT
IR= 1mA
B5817W
20
30
40
Reverse breakdown voltage
V(BR)
V
B5818W
B5819W
B5817W
B5818W
B5819W
VR=20V
VR=30V
VR=40V
Reverse voltage leakage current
IR
1
mA
V
B5817W
B5818W
B5819W
IF=1A
IF=3A
IF=1A
IF=3A
IF=1A
IF=3A
0.45
0.75
0.55
0.875
0.6
Forward voltage
VF
V
V
0.9
Diode capacitance
CD
VR=4V, f=1MHz
120
pF
08/04/2007 Rev.1.00
www.SiliconStandard.com
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