2N3906
ELECTRICAL CHARACTERISTICS
(Tamb=25 oC unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
-40
-40
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC = -10μA, IE=0
IC =-1mA , IB=0
V
IE= -10μA, IC=0
V
VCB= -40 V,IE=0
VCE= -30 V,VBE(off)=-3V
-0.1
-50
μA
nA
μA
Collector cut-off current
ICEX
Emitter cut-off current
IEBO
VEB= -5 V ,
IC=0
-0.1
400
hFE1
VCE=-1 V, IC= -10mA
VCE=-1 V, IC= -50mA
VCE=-1 V, IC= -100mA
IC= -50mA, IB= -5mA
IC= -50mA, IB= -5mA
100
60
DC current gain
hFE2
hFE3
30
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
-0.4
V
V
-0.95
V
CE=-20V, IC= -10mA
f = 100MHz
CC=-3V,VBE=-0.5V,
IC=-10mA,IB1=-1mA
CC=-3V,Ic=-10mA
IB1=IB2=-1mA
Transition frequency
fT
250
MHz
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
V
35
35
ns
ns
ns
ns
ts
tf
V
225
75
CLASSIFICATION OF hFE1
Rank
O
Y
G
Range
100-200
200-300
300-400
03/17/2008 Rev.1.00
www.SiliconStandard.com
2
SSC [ SILICON STANDARD CORP. ]
