2N3904
ELECTRICAL CHARACTERISTICS
(Tamb=25 C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off
Collector cut-off
Emitter cut-off
current
current
current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE1
DC current gain
h
FE2
h
FE3
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
Rise Time
Storage Time
Fall Time
V
CE(sat)
V
BE(sat)
f
T
t
d
t
r
t
s
t
f
Test
conditions
MIN
60
40
6
0.1
0.1
0.1
100
60
30
0.3
0.95
300
35
35
200
50
V
V
MH
Z
ns
ns
ns
ns
400
TYP
MAX
UNIT
V
V
V
μA
μA
μA
o
I
C
=10μA, I
E
=0
I
C
= 1mA , I
B
=0
I
E
= 10μA, I
C
=0
V
CB
=60V, I
E
=0
V
CE
= 40V, I
B
=0
V
EB
= 5V, I
C
=0
V
CE
=1V,
V
CE
=1V,
V
CE
=1V,
I
C
=10mA
I
C
=50mA
I
C
=100mA
I
C
=50mA, I
B
=5mA
I
C
=50mA, I
B
=5mA
V
CE
=20V,I
C
=10mA,f=100MHz
V
CC
=3V,V
BE
=0.5V,
I
C
=10mA,I
B1
=1mA
V
CC
=3V, I
C
=10mA
I
B1
=I
B2
=1mA
CLASSIFICATION
Rank
Range
OF
h
FE1
O
100-200
Y
200-300
G
300-400
03/17/2008 Rev.1.00
www.SiliconStandard.com
2
SSC [ SILICON STANDARD CORP. ]
