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S71GL064A80BAI0F3 参数 Datasheet PDF下载

S71GL064A80BAI0F3图片预览
型号: S71GL064A80BAI0F3
PDF下载: 下载PDF文件 查看货源
内容描述: 堆叠式多芯片产品( MCP )闪存和RAM [Stacked Multi-Chip Product (MCP) Flash Memory and RAM]
分类和应用: 闪存
文件页数/大小: 102 页 / 1762 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
Erase Command Sequence (last two cycles)  
Read Status Data  
VA  
tAS  
SA  
tWC  
VA  
Addresses  
CE#  
2AAh  
555h for chip erase  
tAH  
tCH  
OE#  
tWP  
WE#  
tWPH  
tWHWH2  
tCS  
tDS  
tDH  
Data  
Status  
D
OUT  
55h  
30h  
10 for Chip Erase  
tBUSY  
tRB  
RY/BY#  
VCC  
tVCS  
Notes:  
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”.)  
2. Illustration shows device in word mode.  
Figure 18. Chip/Sector Erase Operation Timings  
tRC  
Addresses  
CE#  
VA  
tACC  
tCE  
VA  
VA  
tPOLL  
tCH  
tOE  
OE#  
WE#  
tDF  
tOH  
tOEH  
High Z  
High Z  
DQ7  
Valid Data  
Complement  
Complement  
True  
DQ0–DQ6  
Status Data  
True  
Valid Data  
Status Data  
tBUSY  
RY/BY#  
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array  
data read cycle.  
Figure 19. Data# Polling Timings (During Embedded Algorithms)  
March 31, 2005 S71GL032A_00_A0  
S71GL032A Based MCPs  
73  
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