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S29GL128P90FFIR10 参数 Datasheet PDF下载

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型号: S29GL128P90FFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存存储
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( P r e l i m i n a r y )  
Table 7.17 Write Operation Status  
DQ7  
DQ5  
DQ2  
RY/  
Status  
(Note 2)  
DQ6  
(Note 1) DQ3  
(Note 2)  
DQ1  
0
BY#  
Embedded Program Algorithm  
Embedded Erase Algorithm  
Program-Suspended  
DQ7#  
0
Toggle  
Toggle  
0
0
N/A  
1
No toggle  
Toggle  
0
0
Standard  
Mode  
N/A  
Invalid (not allowed)  
Data  
1
1
1
1
0
Program  
Suspend  
Mode  
Program-  
Sector  
Suspend  
Non-Program  
Read  
Suspended Sector  
Erase-Suspended  
1
No toggle  
Toggle  
0
N/A  
Toggle  
N/A  
N/A  
N/A  
Erase-  
Sector  
Suspend  
Erase  
Suspend  
Mode  
Non-Erase  
Read  
Data  
Suspended Sector  
Erase-Suspend-Program  
(Embedded Program)  
DQ7#  
0
N/A  
Busy (Note 3)  
Abort (Note 4)  
DQ7#  
DQ7#  
Toggle  
Toggle  
0
0
N/A  
N/A  
N/A  
N/A  
0
1
0
0
Write-to-  
Buffer  
Notes  
1. DQ5 switches to 1 when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the maximum timing limits.  
Refer toDQ5: Exceeded Timing Limits on page 39 for more information.  
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.  
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.  
4. DQ1 switches to 1 when the device has aborted the write-to-buffer operation  
7.9  
Writing Commands/Command Sequences  
During a write operation, the system must drive CE# and WE# to VIL and OE# to VIH when providing an  
address, command, and data. Addresses are latched on the last falling edge of WE# or CE#, while data is  
latched on the 1st rising edge of WE# or CE#. An erase operation can erase one sector, multiple sectors, or  
the entire device. Table 6.2Table 6.3 indicate the address space that each sector occupies. The device  
address space is divided into uniform 64KW/128KB sectors. A sector address is the set of address bits  
required to uniquely select a sector. ICC2 in “DC Characteristics” represents the active current specification for  
the write mode. “AC Characteristics” contains timing specification tables and timing diagrams for write  
operations.  
7.9.1  
RY/BY#  
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in  
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command  
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a  
pull-up resistor to VCC. This feature allows the host system to detect when data is ready to be read by simply  
monitoring the RY/BY# pin, which is a dedicated output and controlled by CE# (not OE#).  
7.9.2  
Hardware Reset  
The RESET# input provides a hardware method of resetting the device to reading array data. When RESET#  
is driven low for at least a period of tRP (RESET# Pulse Width), the device immediately terminates any  
operation in progress, tristates all outputs, resets the configuration register, and ignores all read/write  
commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading  
array data.  
To ensure data integrity Program/Erase operations that were interrupted should be reinitiated once the device  
is ready to accept another command sequence.  
When RESET# is held at VSS, the device draws VCC reset current (ICC5). If RESET# is held at VIL, but not at  
VSS, the standby current is greater. RESET# may be tied to the system reset circuitry which enables the  
system to read the boot-up firmware from the Flash memory upon a system reset. See Figure 11.7  
on page 58 and Figure 11.8 on page 59 for timing diagrams.  
40  
S29GL-P MirrorBit® Flash Family  
S29GL-P_00_A7 November 8, 2007  
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