D a t a S h e e t ( P r e l i m i n a r y )
Performance Characteristics
Maximum Read Access Times (ns)
Random Access
Page Access Time
CE# Access Time
(t
OE# Access Time
(t
Density
Voltage Range (1)
Regulated V
Time (t
)
(t
)
)
)
OE
ACC
PACC
CE
90
90
CC
128 & 256 Mb
Full V
100/110
25
100/110
110
25
25
25
CC
VersatileIO V
110
100
IO
Regulated V
100
CC
512 Mb
1 Gb
Full V
100 (2)/110
110 (2)/120
110
25
25
100 (2)/110
110 (2)/120
110
CC
VersatileIO V
IO
Regulated V
CC
Full V
120
120
CC
VersatileIO V
130
130
IO
Notes
1. Access times are dependent on V and V operating ranges.
CC
IO
See Ordering Information page for further details.
Regulated V : V = 3.0–3.6 V.
CC
CC
Full V : V = V = 2.7–3.6 V.
CC
CC
IO
VersatileIO V : V = 1.65–V , V = 3 V.
IO
IO
CC CC
2. Contact a sales representative for availability.
Current Consumption (typical values)
Random Access Read (f = 5 MHz)
30 mA
1 mA
50 mA
1 µA
8-Word Page Read (f = 10 MHz)
Program/Erase
Standby
Program & Erase Times (typical values)
Single Word Programming
Effective Write Buffer Programming (V ) Per Word
60 µs
15 µs
CC
Effective Write Buffer Programming (V ) Per Word
HH
13.5 µs
0.5 s
Sector Erase Time (64 Kword Sector)
4
S29GL-P MirrorBit® Flash Family
S29GL-P_00_A7 November 8, 2007