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S29GL128P90FFI012 参数 Datasheet PDF下载

S29GL128P90FFI012图片预览
型号: S29GL128P90FFI012
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
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Data
Sheet
(Pre limin ar y)
Table 7.17
Write Operation Status
Status
Standard
Mode
Program
Suspend
Mode
Embedded Program Algorithm
Embedded Erase Algorithm
Program-
Suspend
Read
Program-Suspended
Sector
Non-Program
Suspended Sector
Erase-Suspended
Sector
Non-Erase
Suspended Sector
DQ7#
DQ7#
DQ7#
Toggle
Toggle
Toggle
0
0
0
1
No toggle
0
Data
N/A
N/A
N/A
N/A
N/A
N/A
N/A
0
1
DQ7
DQ7#
0
DQ6
Toggle
Toggle
DQ5
0
0
DQ3
N/A
1
DQ2
No toggle
Toggle
DQ1
0
N/A
RY/
BY#
0
0
1
1
N/A
Toggle
N/A
1
1
0
0
0
Invalid (not allowed)
Data
Erase
Suspend
Mode
Erase-
Suspend
Read
Erase-Suspend-Program
(Embedded Program)
Write-to-
Buffer
Busy
Abort
Notes
1. DQ5 switches to
1
when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the maximum timing limits.
Refer toDQ5:
for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 switches to 1 when the device has aborted the write-to-buffer operation
7.9
Writing Commands/Command Sequences
During a write operation, the system must drive CE# and WE# to V
IL
and OE# to V
IH
when providing an
address, command, and data. Addresses are latched on the last falling edge of WE# or CE#, while data is
latched on the 1st rising edge of WE# or CE#. An erase operation can erase one sector, multiple sectors, or
the entire device.
indicate the address space that each sector occupies. The device
address space is divided into uniform 64KW/128KB sectors. A sector address is the set of address bits
required to uniquely select a sector. I
CC2
in “DC Characteristics” represents the active current specification for
the write mode. “AC Characteristics” contains timing specification tables and timing diagrams for write
operations.
7.9.1
RY/BY#
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to V
CC
. This feature allows the host system to detect when data is ready to be read by simply
monitoring the RY/BY# pin, which is a dedicated output and controlled by CE# (not OE#).
7.9.2
Hardware Reset
The RESET# input provides a hardware method of resetting the device to reading array data. When RESET#
is driven low for at least a period of t
RP
(RESET# Pulse Width), the device immediately terminates any
operation in progress, tristates all outputs, resets the configuration register, and ignores all read/write
commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading
array data.
To ensure data integrity Program/Erase operations that were interrupted should be reinitiated once the device
is ready to accept another command sequence.
When RESET# is held at V
SS
, the device draws V
CC
reset current (I
CC5
). If RESET# is held at V
IL
, but not at
V
SS
, the standby current is greater. RESET# may be tied to the system reset circuitry which enables the
system to read the boot-up firmware from the Flash memory upon a system reset. See
and
for timing diagrams.
40
S29GL-P MirrorBit
®
Flash Family
S29GL-P_00_A7 November 8, 2007