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S29GL128P90FFI012 参数 Datasheet PDF下载

S29GL128P90FFI012图片预览
型号: S29GL128P90FFI012
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
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Data
Sheet
(Pre limin ar y)
Performance Characteristics
Maximum Read Access Times (ns)
Density
Voltage Range
Regulated V
CC
128 & 256 Mb
Full V
CC
VersatileIO V
IO
Regulated V
CC
512 Mb
Full V
CC
VersatileIO V
IO
Regulated V
CC
1 Gb
Full V
CC
VersatileIO V
IO
Random Access
Time (t
ACC
)
90
100/110
110
100
100
110
110
120
130
25
25
25
Page Access Time
(t
PACC
)
CE# Access Time
(t
CE
)
90
100/110
110
100
100
110
110
120
130
25
25
25
OE# Access Time
(t
OE
)
Notes
1. Access times are dependent on V
CC
and V
IO
operating ranges.
See
page for further details.
Regulated V
CC
: V
CC
= 3.0–3.6 V.
Full V
CC
: V
CC
= V
IO
= 2.7–3.6 V.
VersatileIO V
IO
: V
IO
= 1.65–V
CC
, V
CC
= 3 V.
2. Contact a sales representative for availability.
Current Consumption (typical values)
Random Access Read (f = 5 MHz)
8-Word Page Read (f = 10 MHz)
Program/Erase
Standby
30 mA
1 mA
50 mA
1 µA
Program & Erase Times (typical values)
Single Word Programming
Effective Write Buffer Programming (V
CC
) Per Word
Effective Write Buffer Programming (V
HH
) Per Word
Sector Erase Time (64 Kword Sector)
60 µs
15 µs
13.5 µs
0.5 s
4
S29GL-P MirrorBit
®
Flash Family
S29GL-P_00_A7 November 8, 2007