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S29GL128P90FFI012 参数 Datasheet PDF下载

S29GL128P90FFI012图片预览
型号: S29GL128P90FFI012
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
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Da ta
Shee t
(Prelimi nar y)
Figure 7.3
Sector Erase Operation
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Unlock Cycle 1
Unlock Cycle 2
Write
Sector
Erase Cycles:
Address 555h, Data
80h
Address 555h, Data AAh
Address 2AAh, Data 55h
Sector
Address, Data
30h
Command Cycle 1
Command Cycle 2
Command Cycle
3
Specify
first
sector
for erasure
No
Select
Additional
Sectors?
Yes
Write Additional
Sector
Addresses
• Each
additional
cycle must
be
written within t
SEA
timeout
• The host
system
may monitor DQ3 or wait t
SEA
to ensure
acceptance
of erase commands
• No limit on number of
sectors
No
Poll DQ3.
DQ3 = 1?
Yes
Yes
Last
Sector
Selected?
No
• Commands other than Erase
Suspend
or
selecting additional
sectors
for erasure during timeout reset device to reading
array
data
Perform Write Operation
Status
Algorithm
(see
Status
may
be
obtained
by
reading DQ7, DQ6
and/or
DQ2.
Yes
Done?
No
DQ5 = 1?
Yes
No
Error condition (Exceeded Timing Limits)
PASS. Device returns
to reading
array.
FAIL. Write reset command
to return to reading
array.
Notes
1. See
for erase command sequence.
2. See
for information on the sector erase timeout.
November 8, 2007 S29GL-P_00_A7
S29GL-P MirrorBit
®
Flash Family
31