S29GL-N MirrorBit® Flash Family
S29GL064N, S29GL032N
64 Megabit, 32 Megabit
3.0 Volt-only Page Mode Flash Memory
Featuring 110 nm MirrorBit Process Technology
Data Sheet
Distinctive Characteristics
Low power consumption
Architectural Advantages
Single power supply operation
– 25 mA typical active read current
– 50 mA typical erase/program current
– 10 µA typical standby mode current
Manufactured on 110 nm MirrorBit process technology
Secured Silicon Sector region
Package options
– 48-pin TSOP
– 128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random Electronic Serial Number,
accessible through a command sequence
– 56-pin TSOP
– 64-ball Fortified BGA
– 48-ball fine-pitch BGA
– Programmed and locked at the factory or by the customer
Flexible sector architecture
– 64Mb (uniform sector models): One hundred twenty-eight 32 Kword
(64 KB) sectors
Software & Hardware Features
Software features
– 64 Mb (boot sector models): One hundred twenty-seven 32 Kword
(64 KB) sectors + eight 4Kword (8KB) boot sectors
– 32 Mb (uniform sector models): Sixty-four 32Kword (64 KB) sectors
– 32 Mb (boot sector models): Sixty-three 32Kword (64 KB) sectors +
eight 4Kword (8KB) boot sectors
– Advanced Sector Protection: offers Persistent Sector Protection and
Password Sector Protection
– Program Suspend & Resume: read other sectors before
programming operation is completed
Enhanced VersatileI/O™ Control
– Erase Suspend & Resume: read/program other sectors before an
erase operation is completed
– Data# polling & toggle bits provide status
– All input levels (address, control, and DQ input levels) and outputs
are determined by voltage on V input. V range is 1.65 to V
IO
IO
CC
– CFI (Common Flash Interface) compliant: allows host system to
identify and accommodate multiple flash devices
– Unlock Bypass Program command reduces overall multiple-word
programming time
Compatibility with JEDEC standards
– Provides pinout and software compatibility for single-power supply
flash, and superior inadvertent write protection
100,000 erase cycles typical per sector
20-year data retention typical
Hardware features
– WP#/ACC input accelerates programming time (when high voltage
is applied) for greater throughput during system production. Protects
first or last sector regardless of sector protection settings on uniform
sector models
Performance Characteristics
High performance
– Hardware reset input (RESET#) resets device
– Ready/Busy# output (RY/BY#) detects program or erase cycle
completion
– 90 ns access time
– 8-word/16-byte page read buffer
– 25 ns page read time
– 16-word/32-byte write buffer which reduces overall programming
time for multiple-word updates
Publication Number S29GL-N_01
Revision 09
Issue Date November 16, 2007