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S29GL064N90TFI070 参数 Datasheet PDF下载

S29GL064N90TFI070图片预览
型号: S29GL064N90TFI070
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆, 32兆3.0伏只页面模式闪存设有110纳米的MirrorBit工艺技术 [64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 79 页 / 3123 K
品牌: SPANSION [ SPANSION ]
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S29GL-N MirrorBit® Flash Family  
S29GL064N, S29GL032N  
64 Megabit, 32 Megabit  
3.0 Volt-only Page Mode Flash Memory  
Featuring 110 nm MirrorBit Process Technology  
Data Sheet  
Distinctive Characteristics  
„ Low power consumption  
Architectural Advantages  
„ Single power supply operation  
– 25 mA typical active read current  
– 50 mA typical erase/program current  
– 10 µA typical standby mode current  
„ Manufactured on 110 nm MirrorBit process technology  
„ Secured Silicon Sector region  
„ Package options  
– 48-pin TSOP  
– 128-word/256-byte sector for permanent, secure identification  
through an 8-word/16-byte random Electronic Serial Number,  
accessible through a command sequence  
– 56-pin TSOP  
– 64-ball Fortified BGA  
– 48-ball fine-pitch BGA  
– Programmed and locked at the factory or by the customer  
„ Flexible sector architecture  
– 64Mb (uniform sector models): One hundred twenty-eight 32 Kword  
(64 KB) sectors  
Software & Hardware Features  
„ Software features  
– 64 Mb (boot sector models): One hundred twenty-seven 32 Kword  
(64 KB) sectors + eight 4Kword (8KB) boot sectors  
– 32 Mb (uniform sector models): Sixty-four 32Kword (64 KB) sectors  
– 32 Mb (boot sector models): Sixty-three 32Kword (64 KB) sectors +  
eight 4Kword (8KB) boot sectors  
– Advanced Sector Protection: offers Persistent Sector Protection and  
Password Sector Protection  
– Program Suspend & Resume: read other sectors before  
programming operation is completed  
„ Enhanced VersatileI/OControl  
– Erase Suspend & Resume: read/program other sectors before an  
erase operation is completed  
– Data# polling & toggle bits provide status  
– All input levels (address, control, and DQ input levels) and outputs  
are determined by voltage on V input. V range is 1.65 to V  
IO  
IO  
CC  
– CFI (Common Flash Interface) compliant: allows host system to  
identify and accommodate multiple flash devices  
– Unlock Bypass Program command reduces overall multiple-word  
programming time  
„ Compatibility with JEDEC standards  
– Provides pinout and software compatibility for single-power supply  
flash, and superior inadvertent write protection  
„ 100,000 erase cycles typical per sector  
„ 20-year data retention typical  
„ Hardware features  
– WP#/ACC input accelerates programming time (when high voltage  
is applied) for greater throughput during system production. Protects  
first or last sector regardless of sector protection settings on uniform  
sector models  
Performance Characteristics  
„ High performance  
– Hardware reset input (RESET#) resets device  
– Ready/Busy# output (RY/BY#) detects program or erase cycle  
completion  
– 90 ns access time  
– 8-word/16-byte page read buffer  
– 25 ns page read time  
– 16-word/32-byte write buffer which reduces overall programming  
time for multiple-word updates  
Publication Number S29GL-N_01  
Revision 09  
Issue Date November 16, 2007  
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