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S29GL064M90FFIR10 参数 Datasheet PDF下载

S29GL064M90FFIR10图片预览
型号: S29GL064M90FFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
tion of the SecSi Sector without raising any device pin to a high voltage. Note  
that this method is only applicable to the SecSi Sector.  
„ To verify the protect/unprotect status of the SecSi Sector, follow the algo-  
rithm shown in Figure 1.  
Once the SecSi Sector is programmed, locked and verified, the system must write  
the Exit SecSi Sector Region command sequence to return to reading and writing  
within the remainder of the array.  
Factory Locked: SecSi Sector Programmed and Protected At the  
Factory  
In devices with an ESN, the SecSi Sector is protected when the device is shipped  
from the factory. The SecSi Sector cannot be modified in any way. An ESN Factory  
Locked device has an 16-byte random ESN at addresses 000000h–000007h.  
Please contact your sales representative for details on ordering ESN Factory  
Locked devices.  
Customers may opt to have their code programmed by the factory through the  
Spansion programming service (Customer Factory Locked). The devices are then  
shipped from the factory with the SecSi Sector permanently locked. Contact your  
sales representative for details on using the Spansion programming service.  
Write Protect (WP#)  
The Write Protect function provides a hardware method of protecting the first or  
last sector group without using V . Write Protect is one of two functions provided  
ID  
by the WP#/ACC input.  
If the system asserts V on the WP#/ACC pin, the device disables program and  
IL  
erase functions in the first or last sector group independently of whether those  
sector groups were protected or unprotected. Note that if WP#/ACC is at V  
IL  
when the device is in the standby mode, the maximum input load current is in-  
creased. See the table in “DC Characteristics” section on page 122.  
If the system asserts V  
on the WP#/ACC pin, the device reverts to  
IH  
whether the first or last sector was previously set to be protected or un-  
protected using the method described in “Sector Group Protection and  
Unprotection”. Note that WP# has an internal pullup; when uncon-  
nected, WP# is at V  
.
IH  
Hardware Data Protection  
The command sequence requirement of unlock cycles for programming or erasing  
provides data protection against inadvertent writes (refer to Tables 16 and 17 for  
command definitions). In addition, the following hardware data protection mea-  
sures prevent accidental erasure or programming, which might otherwise be  
caused by spurious system level signals during V  
transitions, or from system noise.  
power-up and power-down  
CC  
Low V  
Write Inhibit  
CC  
When V is less than V  
, the device does not accept any write cycles. This pro-  
LKO  
CC  
tects data during V power-up and power-down. The command register and all  
CC  
internal program/erase circuits are disabled, and the device resets to the read  
mode. Subsequent writes are ignored until V is greater than V  
. The system  
LKO  
CC  
must provide the proper signals to the control pins to prevent unintentional writes  
when V is greater than V  
.
LKO  
CC  
April 30, 2004 S29GLxxxM_00A5  
S29GLxxxM MirrorBitTM Flash Family  
97