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S29GL064M90TFIR20 参数 Datasheet PDF下载

S29GL064M90TFIR20图片预览
型号: S29GL064M90TFIR20
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
START  
Read DQ7–DQ0  
Read DQ7–DQ0  
No  
Toggle Bit  
= Toggle?  
Yes  
No  
DQ5 = 1?  
Yes  
Read DQ7–DQ0  
Twice  
Toggle Bit  
= Toggle?  
No  
Yes  
Program/Erase  
Operation Not  
Program/Erase  
Operation Complete  
Complete, Write  
Reset Command  
Note:  
The system should recheck the toggle bit even if DQ5 = “1”  
because the toggle bit may stop toggling as DQ5 changes  
to “1.See the subsections on DQ6 and DQ2 for more  
information.  
Figure 8. Toggle Bit Algorithm  
DQ2: Toggle Bit II  
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular  
sector is actively erasing (that is, the Embedded Erase algorithm is in progress),  
or whether that sector is erase-suspended. Toggle Bit II is valid after the rising  
edge of the final WE# pulse in the command sequence.  
118  
S29GLxxxM MirrorBitTM Flash Family  
S29GLxxxM_00A5 April 30, 2004