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S29GL256M10TAIR10 参数 Datasheet PDF下载

S29GL256M10TAIR10图片预览
型号: S29GL256M10TAIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
Temporary Sector Group Unprotect  
This feature allows temporary unprotection of previously protected sector groups  
to change data in-system. The Sector Group Unprotect mode is activated by set-  
ting the RESET# pin to V . During this mode, formerly protected sector groups  
ID  
can be programmed or erased by selecting the sector group addresses. Once V  
ID  
is removed from the RESET# pin, all the previously protected sector groups are  
protected again. Figure 1 shows the algorithm, and Figure 23 shows the timing  
diagrams, for this feature.  
START  
RESET# = VID  
(Note 1)  
Perform Erase or  
Program Operations  
RESET# = VIH  
Temporary Sector  
Group Unprotect Completed  
(Note 2)  
Notes:  
1. All protected sector groups unprotected (If WP# = VIL, the first or last sector will remain protected).  
2. All previously protected sector groups are protected once again.  
Figure 1. Temporary Sector Group Unprotect Operation  
94  
S29GLxxxM MirrorBitTM Flash Family  
S29GLxxxM_00A5 April 30, 2004  
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