P r e l i m i n a r y
AC Characteristics
Alternate CE# Controlled Erase and Program Operations-S29GL128M
Parameter
Speed Options
Unit
JEDEC Std.
Description
10
11
t
t
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Min
Max
100
110
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AVAV
WC
t
t
0
45
45
0
AVWL
AS
AH
DS
DH
t
t
ELAX
DVEH
EHDX
t
t
t
t
Data Hold Time
t
t
t
Read Recovery Time Before Write (OE# High to WE# Low)
WE# Setup Time
0
GHEL
WLEL
GHEL
t
t
0
WS
WH
t
WE# Hold Time
0
EHWH
t
t
CE# Pulse Width
35
25
240
60
54
0.5
50
4
ELEH
EHEL
CP
t
t
CE# Pulse Width High
CPH
Write Buffer Program Operation (Notes 2, 3)
Single Word Program Operation (Note 2)
Accelerated Single Word Program Operation (Note 2)
Sector Erase Operation (Note 2)
RESET# High Time Before Write
Program Valid before Status Polling (Note 4)
t
t
t
t
µs
WHWH1
WHWH2
WHWH1
WHWH2
sec
ns
t
RH
t
µs
POLL
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. If a program suspend command is issued within t
, the device requires t
before reading status data, once programming has resumed
POLL
POLL
(that is, the program resume command has been written). If the suspend command was issued after t
immediately after programming has resumed. See Figure 23.
, status data is available
POLL
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBitTM Flash Family
139