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S29GL016A90TFER22 参数 Datasheet PDF下载

S29GL016A90TFER22图片预览
型号: S29GL016A90TFER22
PDF下载: 下载PDF文件 查看货源
内容描述: S29GL -A的MirrorBit闪存系列 [S29GL-A MirrorBit Flash Family]
分类和应用: 闪存
文件页数/大小: 89 页 / 1910 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
occurs, the chip erase command sequence should be reinitiated once the device  
returns to reading array data, to ensure data integrity.  
Figure 6, on page 52 illustrates the algorithm for the erase operation. Refer to  
Table 38 on page 70 for parameters, and Figure 18, on page 74 for timing  
diagrams.  
Sector Erase Command Sequence  
Sector erase is a six bus cycle operation. The sector erase command sequence  
is initiated by writing two unlock cycles, followed by a set-up command. Two ad-  
ditional unlock cycles are written, and are then followed by the address of the  
sector to be erased, and the sector erase command. Table 30 on page 54 and  
Table 31 on page 55 shows the address and data requirements for the sector  
erase command sequence.  
The device does not require the system to preprogram prior to erase. The Em-  
bedded Erase algorithm automatically programs and verifies the entire memory  
for an all zero data pattern prior to electrical erase. The system is not required  
to provide any controls or timings during these operations.  
After the command sequence is written, a sector erase time-out of 50 µs occurs.  
During the time-out period, additional sector addresses and sector erase com-  
mands may be written. Loading the sector erase buffer may be done in any  
sequence, and the number of sectors may be from one sector to all sectors. The  
time between these additional cycles must be less than 50 µs, otherwise erasure  
may begin. Any sector erase address and command following the exceeded  
time-out may or may not be accepted. It is recommended that processor inter-  
rupts be disabled during this time to ensure all commands are accepted. The  
interrupts can be re-enabled after the last Sector Erase command is written. Any  
command other than Sector Erase or Erase Suspend during the time-out  
period resets the device to the read mode. Note that the Secured Silicon  
Sector, autoselect, and CFI functions are unavailable when an erase op-  
eration is in progress. The system must rewrite the command sequence and  
any additional addresses and commands.  
The system can monitor DQ3 to determine if the sector erase timer has timed  
out (See the section on DQ3: Sector Erase Timer.). The time-out begins from the  
rising edge of the final WE# pulse in the command sequence.  
When the Embedded Erase algorithm is complete, the device returns to reading  
array data and addresses are no longer latched. The system can determine the  
status of the erase operation by reading DQ7, DQ6, or DQ2 in the erasing sector.  
Refer to the Write Operation Status section for information on these status bits.  
Once the sector erase operation begins, only the Erase Suspend command is  
valid. All other commands are ignored. However, note that a hardware reset  
immediately terminates the erase operation. If that occurs, the sector erase  
command sequence should be reinitiated once the device returns to reading  
array data, to ensure data integrity.  
Figure 6, on page 52 illustrates the algorithm for the erase operation. Refer to  
Table 38 on page 70 for parameters, and Figure 18, on page 74 for timing  
diagrams.  
April 22, 2005 S29GL-A_00_A3  
S29GL-A MirrorBit™ Flash Family  
51  
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