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S29GL016A90TFER22 参数 Datasheet PDF下载

S29GL016A90TFER22图片预览
型号: S29GL016A90TFER22
PDF下载: 下载PDF文件 查看货源
内容描述: S29GL -A的MirrorBit闪存系列 [S29GL-A MirrorBit Flash Family]
分类和应用: 闪存
文件页数/大小: 89 页 / 1910 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
address range without intervening erases. For applications requiring incremental  
bit programming, a modified programming method is required; please contact  
your local Spansion representative. Any bit in a write buffer address range  
cannot be programmed from 0 back to a 1. Attempting to do so may cause  
the device to set DQ5=1, of cause the DQ7 and DQ6 status bits to indicate the  
operation was successful. However, a succeeding read shows that the data is still  
0. Only erase operations can convert a 0 to a 1.  
Accelerated Program  
The device offers accelerated program operations through the WP#/ACC or ACC  
pin depending on the particular product. When the system asserts V  
on the  
HH  
WP#/ACC or ACC pin. The device uses the higher voltage on the WP#/ACC or  
ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at  
V
for operations other than accelerated programming, or device damage may  
HH  
result. WP# contains an internal pullup; when unconnected, WP# is at V  
.
IH  
Figure 3, on page 48 illustrates the algorithm for the program operation. Refer  
to the Erase and Program Operations–AC Characteristics on page 66 for param-  
eters, and Figure 14, on page 68 for timing diagrams.  
April 22, 2005 S29GL-A_00_A3  
S29GL-A MirrorBit™ Flash Family  
47  
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