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S29CD032G0JFAN012 参数 Datasheet PDF下载

S29CD032G0JFAN012图片预览
型号: S29CD032G0JFAN012
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS 2.5伏只突发模式下的双启动,同步读/写FLASH MEMORY [CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY]
分类和应用:
文件页数/大小: 93 页 / 1616 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
Logical Inhibit  
Write cycles are inhibited by holding any one of OE# = V , CE# = V , or WE#  
IL  
IH  
= V . To initiate a write cycle, CE# and WE# must be a logical zero (V ) while  
IH  
IL  
OE# is a logical one (V ).  
IH  
Power-Up Write Inhibit  
If WE# = CE# = V and OE# = V during power-up, the device does not accept  
IL  
IH  
commands on the rising edge of WE#. The internal state machine is automatically  
reset to reading array data on power-up.  
VCC and VIO Power-up And Power-down Sequencing  
The device imposes no restrictions on V and V power-up or power-down se-  
CC  
IO  
quencing. Asserting RESET# to V is required during the entire V  
and V  
IO  
IL  
CC  
power sequence until the respective supplies reach their operating voltages.  
Once, V and V attain their respective operating voltages, de-assertion of RE-  
CC  
IO  
SET# to V is permitted.  
IH  
34  
S29CD032G  
30606B0 March 22, 2004  
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