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S29AL032D70BFI030 参数 Datasheet PDF下载

S29AL032D70BFI030图片预览
型号: S29AL032D70BFI030
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位CMOS 3.0伏只快闪记忆体 [32 Megabit CMOS 3.0 Volt-only Flash Memory]
分类和应用:
文件页数/大小: 69 页 / 1731 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
General Description  
The S29AL032D is a 32 megabit, 3.0 volt-only flash memory device, organized as 2,097,152  
words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on DQ0-DQ15;  
byte mode data appears on DQ0-DQ7. The device is designed to be programmed in-system with  
the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers.  
The device is available with access times as fast as 70 ns. The devices are offered in 40-pin TSOP,  
48-pin TSOP and 48-ball FBGA packages. Standard control pins- chip enable (CE#), write enable  
(WE#), and output enable (OE#)-control normal read and write operations, and avoid bus con-  
tention issues.  
The device requires only a single 3.0 volt power supply for both read and write functions. In-  
ternally generated and regulated voltages are provided for the pro-gram and erase operations.  
S29AL032D Features  
The Secured Silicon Sector is an extra sector capable of being permanently locked by Spansion  
or customers. The Secured Silicon Indicator Bit (DQ7) is permanently set to a 1 if the part is  
factory locked, and set to a 0 if customer lockable. This way, customer lockable parts can never  
be used to replace a factory locked part. Note that the S29AL032D has a Secured Silicon  
Sector size of 128 words (256 bytes).  
Factory locked parts provide several options. The Secured Silicon Sector may store a secure, ran-  
dom 16 byte ESN (Electronic Serial Number), customer code (programmed through the Spansion  
programming service), or both.  
The S29AL032D is entirely command set compatible with the JEDEC single-power-supply  
Flash standard. Commands are written to the command register using standard microprocessor  
write timings. Register contents serve as input to an internal state-machine that controls the  
erase and programming circuitry. Write cycles also internally latch addresses and data needed for  
the programming and erase operations. Reading data out of the device is similar to reading from  
other Flash or EPROM devices.  
Device programming occurs by executing the program command sequence. This initiates the Em-  
bedded Program algorithm—an internal algorithm that automatically times the program pulse  
widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming  
times by requiring only two write cycles to program data instead of four.  
Device erasure occurs by executing the erase command sequence. This initiates the Embedded  
Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not al-  
ready programmed) before executing the erase operation. During erase, the device automatically  
times the erase pulse widths and verifies proper cell margin.  
The host system can detect whether a program or erase operation is complete by observing the  
RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a pro-  
gram or erase cycle has been completed, the device is ready to read array data or accept another  
command.  
The sector erase architecture allows memory sectors to be erased and reprogrammed without  
affecting the data contents of other sectors. The device is fully erased when shipped from the  
factory.  
Hardware data protection measures include a low V detector that automatically inhibits write  
CC  
operations during power transitions. The hardware sector protection feature disables both  
program and erase operations in any combination of the sectors of memory. This can be achieved  
in-system or via programming equipment.  
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S29AL032D  
S29AL032D_00_A3 June 13, 2005