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S29AL016M10BFI020 参数 Datasheet PDF下载

S29AL016M10BFI020图片预览
型号: S29AL016M10BFI020
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8位/ IMX 16位), 3.0伏只引导扇区闪存 [16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY]
分类和应用: 闪存内存集成电路
文件页数/大小: 59 页 / 2056 K
品牌: SPANSION [ SPANSION ]
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START  
Read DQ7–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
No  
DQ5 = 1?  
Yes  
Read DQ7–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
PASS  
FAIL  
Notes:  
1. VA = Valid address for programming. During a sector erase operation, a valid  
address is an address within any sector selected for erasure. During chip erase, a  
valid address is any non-protected sector address.  
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simulta-  
neously with DQ5.  
Figure 7. Data# Polling Algorithm  
RY/BY#: Ready/Busy#  
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Em-  
bedded Algorithm is in progress or complete. The RY/BY# status is valid after the  
rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an  
open-drain output, several RY/BY# pins can be tied together in parallel with a  
pull-up resistor to V  
.
CC  
35  
S29AL016M  
S29AL016M_00A4 April 21, 2004  
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