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S29AL008D70TAI020 参数 Datasheet PDF下载

S29AL008D70TAI020图片预览
型号: S29AL008D70TAI020
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1一M× 8位/ 512的K× 16位) CMOS 3.0伏只引导扇区闪存 [8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 55 页 / 1519 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
START  
Read DQ7–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
No  
DQ5 = 1?  
Yes  
Read DQ7–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
PASS  
FAIL  
Notes:  
1. VA = Valid address for programming. During a sector  
erase operation, a valid address is an address within  
any sector selected for erasure. During chip erase, a  
valid address is any non-protected sector address.  
2. DQ7 should be rechecked even if DQ5 = 1 because  
DQ7 may change simultaneously with DQ5.  
Figure 5. Data# Polling Algorithm  
RY/BY#: Ready/Busy#  
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Em-  
bedded Algorithm is in progress or complete. The RY/BY# status is valid after the  
rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an  
open-drain output, several RY/BY# pins can be tied together in parallel with a  
pull-up resistor to V  
.
CC  
28  
S29AL008D  
S29AL008D_00A3 June 16, 2005