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S29AL004D70MFI013 参数 Datasheet PDF下载

S29AL004D70MFI013图片预览
型号: S29AL004D70MFI013
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512 Kx的8位/ 256千×16位) CMOS 3.0伏只引导扇区闪存 [4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 55 页 / 1488 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
START  
Read DQ7–DQ0  
(Note 1)  
Read DQ7–DQ0  
No  
Toggle Bit  
= Toggle?  
Yes  
No  
DQ5 = 1?  
Yes  
(Notes  
1, 2)  
Read DQ7–DQ0  
Twice  
Toggle Bit  
= Toggle?  
No  
Yes  
Program/Erase  
Operation Not  
Complete, Write  
Reset Command  
Program/Erase  
Operation Complete  
Notes:  
1. Read toggle bit twice to determine whether or not it  
is toggling. See text.  
2. Recheck toggle bit because it may stop toggling as  
DQ5 changes to 1. See text.  
Figure 6. Toggle Bit Algorithm  
sector erase commands is always less than 50 µs. See also the Sector Erase  
Command Sequence‚ on page 22.  
After the sector erase command sequence is written, the system should read the  
status on DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure the device has ac-  
cepted the command sequence, and then read DQ3. If DQ3 is 1, the internally  
controlled erase cycle has begun; all further commands (other than Erase Sus-  
pend) are ignored until the erase operation is complete. If DQ3 is 0, the device  
30  
S29AL004D  
S29AL004D_00_A1 February 18, 2005  
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