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MBM29F800BA-90PF 参数 Datasheet PDF下载

MBM29F800BA-90PF图片预览
型号: MBM29F800BA-90PF
PDF下载: 下载PDF文件 查看货源
内容描述: FL灰内存 [FLASH MEMORY]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 49 页 / 569 K
品牌: SPANSION [ SPANSION ]
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MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90  
(Continued)  
The MBM29F800TA/BA is pin and command set compatible with JEDEC standard E2PROMs. Commands are  
written to the command register using standard microprocessor write timings. Register contents serve as input  
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally  
latch addresses and data needed for the programming and erase operations. Reading data out of the devices  
is similar to reading from12.0 V Flash or EPROM devices.  
The MBM29F800TA/BA is programmed by executing the program command sequence. This will invoke the  
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths  
and verifies proper cell margin. Typically, each sector can be programmed and verified in less than 0.5 seconds.  
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase  
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed  
before executing the erase operation. During erase, the device automatically times the erase pulse widths and  
verifies proper cell margin.  
Any individual sector is typically erased and verified in 1.0 second (if already completely preprogrammed.).  
The devices also features a sector erase architecture. The sector mode allows each sector to be erased and  
reprogrammed without affecting other sectors. The MBM29F800TA/BA is erased when shipped from the factory.  
The devices features single 5.0 V power supply operation for both read and write functions. Internally generated  
and regulated voltages are provided for the program and erase operations. A low VCC detector automatically  
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7,  
by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been  
completed, the device internally resets to the read mode.  
Fujitsu’s Flash technology combines years of EPROM and E2PROM experience to produce the highest levels  
of quality, reliability, and cost effectiveness. The MBM29F800TA/BA memory electrically erase the entire chip or  
all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one  
byte/word at a time using the EPROM programming mechanism of hot electron injection.  
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