MBM29F040C-55/-70/-90
■ GENERAL DESCRIPTION
The MBM29F040C is a 4M-bit, 5.0 V-only Flash memory organized as 512K bytes of 8 bits each. The
MBM29F040C is offered in a 32-pin PLCC and 32-pin TSOP(I) package. This device is designed to be
programmed in-system with the standard system 5.0 V VCC supply. A 12.0 V VPP is not required for write or erase
operations. The device can also be reprogrammed in standard EPROM programmers.
The standard MBM29F040C offers access times 55 ns and 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write
enable (WE), and output enable (OE) controls.
The MBM29F040C is pin and command set compatible with JEDEC standard E2PROMs. Commands are written
to the command register using standard microprocessor write timings. Register contents serve as input to an
internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the device is similar
to reading from 12.0 V Flash or EPROM devices.
TheMBM29F040Cisprogrammedbyexecutingtheprogramcommandsequence. ThiswillinvoketheEmbedded
Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. Typically, each sector can be programmed and verified in less than 0.5 seconds. Erase is
accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which
is an internal algorithm that automatically preprograms the array if it is not already programmed before executing
the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell
margin.
Any individual sector is typically erased and verified in 1 second. (If already completely preprogrammed.)
The device also features a sector erase architecture. The sector mode allows for 64K byte sectors of memory
to be erased and reprogrammed without affecting other sectors. The MBM29F040C is erased when shipped
from the factory.
The device features single 5.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low VCC detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7
or by the Toggle Bit feature on DQ6. Once the end of a program or erase cycle has been completed, the device
internally resets to the read mode.
Fujitsu's Flash technology combines years of EPROM and E2PROM experience to produce the highest levels
of quality, reliability and cost effectiveness. The MBM29F040C memory electrically erases the entire chip or all
bits within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a
time using the EPROM programming mechanism of hot electron injection.
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