欢迎访问ic37.com |
会员登录 免费注册
发布采购

MBM29DL324TE90TN 参数 Datasheet PDF下载

MBM29DL324TE90TN图片预览
型号: MBM29DL324TE90TN
PDF下载: 下载PDF文件 查看货源
内容描述: FLASH存储器CMOS 32米(4 MX 8/2 MX 16 )位双操作 [FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation]
分类和应用: 存储
文件页数/大小: 84 页 / 1272 K
品牌: SPANSION [ SPANSION ]
 浏览型号MBM29DL324TE90TN的Datasheet PDF文件第37页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第38页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第39页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第40页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第42页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第43页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第44页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第45页  
MBM29DL32XTE/BE80/90  
Suspend mode, and is ready for another valid operation. See “Autoselect Command Sequence” for more infor-  
mation.  
The system must write the Program Resume command (address bits are “Bank Address”) to exit from the  
Program Suspend mode and continue programming operation. Further writes of the Resume command are  
ignored. Another Program Suspend command can be written after the device resumes programming.  
• Chip Erase  
Chip erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the  
“set-up” command. Two more “unlock” write cycles are then followed by the chip erase command.  
Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded Erase  
Algorithm command sequence the devices will automatically program and verify the entire memory for an all  
zero data pattern prior to electrical erase (Preprogram function) . The system is not required to provide any  
controls or timings during these operations.  
The system can determine the status of the erase operation by using DQ7 (Data Polling) , DQ6 (Toggle Bit) , or  
RY/BY. The chip erase begins on the rising edge of the last CE or WE, whichever happens first in the command  
sequence and terminates when the data on DQ7 is “1” (See Write Operation Status section.) at which time the  
device returns to read the mode.  
Chip Erase Time; Sector Erase Time × All sectors + Chip Program Time (Preprogramming)  
“Embedded EraseTM Algorithm” in “FLOW CHART” illustrates the Embedded EraseTM Algorithm using typical  
command strings and bus operations.  
• Sector Erase  
Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the  
“set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The sector  
address (any address location within the desired sector) is latched on the falling edge of CE or WE whichever  
happens later, while the command (Data = 30h) is latched on the rising edge of CE or WE which happens first.  
After time-out of “tTOW” from the rising edge of the last sector erase command, the sector erase operation will  
begin.  
Multiple sectors may be erased concurrently by writing the six bus cycle operations on “MBM29DL32XTE/BE  
Command Definitions” in “DEVICEBUS OPERATION”. This sequence is followed with writes of the Sector  
Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must  
be less than “tTOW” otherwise that command will not be accepted and erasure will start. It is recommended that  
processor interrupts be disabled during this time to guarantee this condition. The interrupts can be re-enabled  
after the last Sector Erase command is written. A time-out of “tTOW” from the rising edge of last CEor WE whichever  
happens first will initiate the execution of the Sector Erase command (s) . If another falling edge of CE or WE,  
whichever happens first occurs within the “tTOW” time-out window the timer is reset. (Monitor DQ3 to determine  
if the sector erase timer window is still open, see section DQ3, Sector Erase Timer.) Resetting the devices once  
execution has begun will corrupt the data in the sector. In that case, restart the erase on those sectors and allow  
them to complete. (Refer to the Write Operation Status section for Sector Erase Timer operation.) Loading the  
sector erase buffer may be done in any sequence and with any number of sectors (0 to 38) .  
Sector erase does not require the user to program the devices prior to erase. The devices automatically program  
all memory locations in the sector (s) to be erased prior to electrical erase (Preprogram function) . When erasing  
a sector or sectors the remaining unselected sectors are not affected. The system is not required to provide any  
controls or timings during these operations.  
The system can determine the status of the erase operation by using DQ7 (Data Polling) , DQ6 (Toggle Bit) , or  
RY/BY.  
The sector erase begins after the “tTOW” time out from the rising edge of CE or WE whichever happens first for  
the last sector erase command pulse and terminates when the data on DQ7 is “1” (See Write Operation Status  
41  
 复制成功!