欢迎访问ic37.com |
会员登录 免费注册
发布采购

MBM29DL324TE90TN 参数 Datasheet PDF下载

MBM29DL324TE90TN图片预览
型号: MBM29DL324TE90TN
PDF下载: 下载PDF文件 查看货源
内容描述: FLASH存储器CMOS 32米(4 MX 8/2 MX 16 )位双操作 [FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation]
分类和应用: 存储
文件页数/大小: 84 页 / 1272 K
品牌: SPANSION [ SPANSION ]
 浏览型号MBM29DL324TE90TN的Datasheet PDF文件第35页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第36页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第37页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第38页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第40页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第41页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第42页浏览型号MBM29DL324TE90TN的Datasheet PDF文件第43页  
MBM29DL32XTE/BE80/90  
COMMAND DEFINITIONS  
Device operations are selected by writing specific address and data sequences into the command register. Some  
commands are required Bank Address (BA) input. When command sequences are inputted to bank being read,  
the commands have priority than reading. “MBM29DL32XTE/BE Command Definitions” in “DEVICEBUS  
OPERATION” defines the valid register command sequences. Note that the Erase Suspend (B0h) and Erase  
Resume (30h) commands are valid only while the Sector Erase operation is in progress. Also the Program  
Suspend (B0h) and Program Resume (30h) commands are valid only while the Program operation is in progress.  
Moreover both Read/Reset commands are functionally equivalent, resetting the device to the read mode. Please  
note that commands are always written at DQ0 to DQ7 and DQ8 to DQ15 bits are ignored.  
• Read/Reset Command  
In order to return from Autoselect mode or Exceeded Timing Limits (DQ5 = 1) to Read/Reset mode, the  
Read/Reset operation is initiated by writing the Read/Reset command sequence into the command register.  
Microprocessor read cycles retrieve array data from the memory. The devices remain enabled for reads until the  
command register contents are altered.  
The devices will automatically power-up in the Read/Reset state. In this case, a command sequence is not  
required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures  
that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read  
Characteristics and Waveforms for the specific timing parameters.  
• Autoselect Command  
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,  
manufacture and device codes must be accessible while the devices reside in the target system. PROM pro-  
grammers typically access the signature codes by raising A9 to a high voltage. However, multiplexing high voltage  
onto the address lines is not generally desired system design practice.  
The device contains an Autoselect command operation to supplement traditional PROM programming method-  
ology. The operation is initiated by writing the Autoselect command sequence into the command register.  
The Autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write  
cycle that contains the bank address (BA) and the Autoselect command. Then the manufacture and device  
codes can be read from the bank, and an actual data of memory cell can be read from the another bank.  
Following the command write, a read cycle from address (BA) 00h retrieves the manufacture code of 04h. A  
read cycle from address (BA) 01h for ×16 ( (BA) 02h for ×8) returns the device code (MBM29DL322TE = 55h  
and MBM29DL322BE = 56h for ×8 mode; MBM29DL322TE = 2255h and MBM29DL322BE = 2256h for ×16  
mode) . (MBM29DL323TE = 50h and MBM29DL323BE = 53h for ×8 mode; MBM29DL323TE = 2250h and  
MBM29DL323BE = 2253h for ×16 mode) . (MBM29DL324TE = 5Ch and MBM29DL324BE = 5Fh for ×8 mode;  
MBM29DL324TE = 225Ch and MBM29DL324BE = 225Fh for ×16  
mode) . (See “MBM29DL322/323/324TE/BE Sector Group Protection Verify Autoselect Codes Tables”, “Ex-  
tended Autoselect Code Tables” in “DEVICE BUS OPERATION”.)  
All manufacturer and device codes will exhibit odd parity with DQ7 defined as the parity bit. Sector state (protection  
or unprotection) will be informed by address (BA) 02h for ×16 ( (BA) 04h for ×8) . Scanning the sector group  
addresses (A20, A19, A18, A17, A16, A15, A14, A13, and A12) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” at  
device output DQ0 for a protected sector group. The programming verification should be performed by verify  
sector group protection on the protected sector. (See “Sector Address Table (MBM29DL324TE) ”, “Sector  
Address Table (MBM29DL324BE) ”, “Sector Group Addresses (MBM29DL32XTE) (Top Boot Block) ” and  
“Sector Group Addresses (MBM29DL32XBE) (Bottom Boot Block) ” in “FLEXIBLE SECTOR-ERASE AR-  
CHITECTURE”.)  
The manufacture and device codes can be allowed reading from selected bank. To read the manufacture and  
device codes and sector group protection status from non-selected bank, it is necessary to write Read/Reset  
command sequence into the register and then Autoselect command should be written into the bank to be read.  
39  
 复制成功!