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MBM29DL163BE-70TN 参数 Datasheet PDF下载

MBM29DL163BE-70TN图片预览
型号: MBM29DL163BE-70TN
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存的CMOS 16M ( 2M ×8 / 1M ×16 )位双操作 [FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 76 页 / 1048 K
品牌: SPANSION [ SPANSION ]
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MBM29DL16XTE/BE70/90  
FUNCTIONAL DESCRIPTION  
• Simultaneous Operation  
MBM29DL16XTE/BE have feature, which is capability of reading data from one bank of memory while a program  
or erase operation is in progress in the other bank of memory (simultaneous operation), in addition to the  
conventional features (read, program, erase, erase-suspend read, and erase-suspend program). The bank  
selection can be selected by bank address (A19 to A15) with zero latency.  
The MBM29DL161TE/BE have two banks which contain  
Bank 1 (8KB × 8 sectors) and Bank 2 (64KB × 31 sectors).  
The MBM29DL162TE/BE have two banks which contain  
Bank 1 (8KB × 8 sectors, 64KB × 3 sectors) and Bank 2 (64KB × 28 sectors).  
The MBM29DL163TE/BE have two banks which contain  
Bank 1 (8KB × 8 sectors, 64KB × 7 sectors) and Bank 2 (64KB × 24 sectors).  
The MBM29DL164TE/BE have two banks which contain  
Bank 1 (8KB × 8 sectors, 64KB × 15 sectors) and Bank 2 (64KB × 16 sectors).  
The simultaneous operation can not execute multi-function mode in the same bank. “Simultaneous Operation  
Table” shows combination to be possible for simultaneous operation. (Refer to “(8) Bank-to-bank Read/Write  
Timing Diagram” in TIMING DIAGRAM.)  
Simultaneous Operation Table  
Case  
Bank 1 Status  
Read mode  
Bank 2 Status  
Read mode  
1
2
3
4
5
6
7
Read mode  
Autoselect mode  
Program mode  
Erase mode *  
Read mode  
Read mode  
Read mode  
Autoselect mode  
Program mode  
Erase mode *  
Read mode  
Read mode  
*: By writing erase suspend command on the bank address of sector being erased, the erase operation becomes  
suspended so that it enables reading from or programming the remaining sectors.  
• Read Mode  
TheMBM29DL16XTE/BEhavetwocontrolfunctionswhichmustbesatisfiedinordertoobtaindataattheoutputs.  
CE is the power control and should be used for a device selection. OE is the output control and should be used  
to gate data to the output pins if a device is selected.  
Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable  
access time (tCE) is the delay from stable addresses and stable CE to valid data at the output pins. The output  
enable access time (tOE) is the delay from the falling edge of OE to valid data at the output pins. (Assuming the  
addresses have been stable for at least tACC-tOE time.) When reading out a data without changing addresses after  
power-up, it is necessary to input hardware reset or to change CE pin from “H” to “L”.  
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