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MBM29DL163BE-70TN 参数 Datasheet PDF下载

MBM29DL163BE-70TN图片预览
型号: MBM29DL163BE-70TN
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存的CMOS 16M ( 2M ×8 / 1M ×16 )位双操作 [FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 76 页 / 1048 K
品牌: SPANSION [ SPANSION ]
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MBM29DL16XTE/BE70/90  
(Continued)  
• Single 3.0 V read, program, and erase  
Minimizes system level power requirements  
• Compatible with JEDEC-standard commands  
Uses same software commands as E2PROMs  
• Compatible with JEDEC-standard world-wide pinouts  
48-pin TSOP(1) (Package suffix: TN – Normal Bend Type, TR – Reversed Bend Type)  
48-pin FBGA (Package suffix: PBT)  
• Minimum 100,000 program/erase cycles  
• High performance  
70 ns maximum access time  
• Sector erase architecture  
Eight 4K word and thirty one 32K word sectors in word mode  
Eight 8K byte and thirty one 64K byte sectors in byte mode  
Any combination of sectors can be concurrently erased. Also supports full chip erase.  
• Boot Code Sector Architecture  
T = Top sector  
B = Bottom sector  
• HiddenROM region  
64K byte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence  
Factory serialized and protected to provide a secure electronic serial number (ESN)  
• WP/ACC input pin  
At VIL, allows protection of boot sectors, regardless of sector group protection/unprotection status  
At VACC, increases program performance  
• Embedded EraseTM* Algorithms  
Automatically pre-programs and erases the chip or any sector  
• Embedded ProgramTM* Algorithms  
Automatically writes and verifies data at specified address  
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion  
• Ready/Busy output (RY/BY)  
Hardware method for detection of program or erase cycle completion  
• Automatic sleep mode  
When addresses remain stable, automatically switch themselves to low power mode.  
• Low VCC write inhibit 2.5 V  
• Program Suspend/Resume  
Suspends the program operation to allow a read in another sector with in the same device  
• Erase Suspend/Resume  
Suspends the erase operation to allow a read data and/or program in another sector within the same device  
• Sector group protection  
Hardware method disables any combination of sector groups from program or erase operations  
• Sector Group Protection Set function by Extended sector group protection command  
• Fast Programming Function by Extended Command  
• Temporary sector group unprotection  
Temporary sector group unprotection via the RESET pin.  
• In accordance with CFI (Common Flash Memory Interface)  
*: Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.  
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