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MBM29DL161TE-70TN 参数 Datasheet PDF下载

MBM29DL161TE-70TN图片预览
型号: MBM29DL161TE-70TN
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存的CMOS 16M ( 2M ×8 / 1M ×16 )位双操作 [FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 76 页 / 1048 K
品牌: SPANSION [ SPANSION ]
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MBM29DL16XTE/BE70/90  
Notes: Address bits A19 to A11 = X = “H” or “L” for all address commands except or Program Address (PA), Sector  
Address (SA), and Bank Address (BA).  
Bus operations are defined in “MBM29DL16XTE/BE User Bus Operations Tables (BYTE = VIH and  
BYTE = VIL)”.  
RA:  
IA :  
Address of the memory location to be read  
Autoselect read address that sets both the bank address specified at (A19, A18, A17, A16, A15) and  
all the other A6, A1, A0, (A-1).  
PA:  
SA:  
Address of the memory location to be programmed  
Addresses are latched on the falling edge of the write pulse.  
Address of the sector to be erased. The combination of A19, A18, A17, A16, A15, A14, A13, and A12 will  
uniquely select any sector.  
BA:  
RD:  
ID :  
PD:  
Bank Address (A19 to A15)  
Data read from location RA during read operation.  
Device code/manufacture code for the address located by IA.  
Data to be programmed at location PA. Data is latched on the rising edge of write pulse.  
SPA: Sector group address to be protected. Set sector group address (SGA) and (A6, A1, A0) = (0, 1, 0).  
SD:  
Sector group protection verify data. Output 01h at protected sector group addresses and output  
00h at unprotected sector group addresses.  
HRA: Address of the HiddenROM area  
29DL16XTE (Top Boot Type)  
Word Mode: 0F8000h to 0FFFFFh  
Byte Mode: 1F0000h to 1FFFFFh  
29DL16XBE (Bottom Boot Type) Word Mode: 000000h to 007FFFh  
Byte Mode: 000000h to 00FFFFh  
HRBA: Bank Address of the HiddenROM area  
29DL16XTE (Top Boot Type)  
:A19 = A18= A17 = A16 = A15 = VIH  
29DL16XBE (Bottom Boot Type) :A19 = A18= A17 = A16 = A15 = VIL  
The system should generate the following address patterns:  
Word Mode: 555h or 2AAh to addresses A10 to A0  
Byte Mode: AAAh or 555h to addresses A10 to A0 and A–1  
Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.  
Command combinations not described in Command Definitions table are illegal.  
*1: Both of these reset commands are equivalent.  
*2: This command is valid during Fast Mode.  
*3: This command is valid while RESET = VID (except during HiddenROM MODE).  
*4: The valid addresses are A6 to A0.  
*5: This command is valid during HiddenROM mode.  
*6: The data “00h” is also acceptable.  
*7: The fourth bus cycle is only for read.  
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