FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20880-4E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT Dual Operation
MBM29DL16XTE/BE70/90
■ FEATURES
• 0.23 µm Process Technology
• Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes
(Refer to “MBM29DL16XTE/BE Device Bank Divisions Table” in ■GENERAL DESCRIPTION)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
(Continued)
■ PRODUCT LINE UP
Part No.
Address Access Time (Max)
CE Access Time (Max)
OE Access Time (Max)
Power Supply Voltage
MBM29DL16XTE/BE70
MBM29DL16XTE/BE90
70 ns
70 ns
30 ns
90 ns
90 ns
35 ns
+0.6V
3.0 V
−0.3V
■ PACKAGES
48-pin plastic TSOP (1)
48-pin plastic TSOP (1)
48-pin plastic FBGA
Marking Side
Marking Side
(FPT-48P-M20)
(FPT-48P-M19)
(BGA-48P-M11)
SPANSION [ SPANSION ]
