Am29F010B
1 Megabit (128 K x 8-bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
■ Embedded Algorithms
— 5.0 V ± 10% for read, erase, and program operations
— Simplifies system-level power requirements
— Embedded Erase algorithm automatically
pre-programs and erases the chip or any
combination of designated sector
■ Manufactured on 0.32 µm process technology
— Embedded Program algorithm automatically
programs and verifies data at specified address
— Compatible with Am29F010 and Am29F010A
device
■ Erase Suspend/Resume
■ High performance
— Supports reading data from a sector not
being erased
— 45 ns maximum access time
■ Low power consumption
■ Minimum 1 million erase cycles guaranteed per
— 12 mA typical active read current
— 30 mA typical program/erase current
— <1 µA typical standby current
sector
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
■ Package options
■ Flexible sector architecture
— Eight 16 Kbyte sectors
— 32-pin PLCC
— 32-pin TSOP
— Any combination of sectors can be erased
— Supports full chip erase
— 32-pin PDIP
■ Compatible with JEDEC standards
■ Sector protection
— Pinout and software compatible with
single-power-supply flash
— Hardware-based feature that disables/re-
enables program and erase operations in any
combination of sectors
— Superior inadvertent write protection
— Sector protection/unprotection can be
implemented using standard PROM
programming equipment
■ Data# Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
Publication# 22336 Rev: C Amendment/1
Issue Date: November 18, 2002
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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