ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
sec
sec
µs
Comments
Sector Erase Time
0.4
56
5
5
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
Byte Program Time
150
120
30
Accelerated Byte/Word Program Time
Accelerated Chip Programming Time
Word Program Time
4
µs
10
7
sec
µs
Excludes system level
overhead (Note 5)
210
126
84
Byte Mode
Word Mode
42
28
Chip Program Time
(Note 3)
sec
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally, programming typicals
assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the
maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 12 for further
information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
+100 mA
VCC Current
–100 mA
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP & BGA PIN CAPACITANCE
Parameter Symbol
Parameter Description
Test Setup
Typ
6
Max
7.5
5.0
12
Unit
pF
pF
pF
pF
pF
pF
TSOP
CIN
Input Capacitance
VIN = 0
VOUT = 0
VIN = 0
Fine-pitch BGA
TSOP
4.2
8.5
5.4
7.5
3.9
COUT
Output Capacitance
Fine-pitch BGA
TSOP
6.5
9
CIN2
Control Pin Capacitance
Fine-pitch BGA
4.7
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter Description
Test Conditions
150°C
Min
10
Unit
Years
Years
Minimum Pattern Data Retention Time
125°C
20
48
Am29DL640H
June 7, 2005
SPANSION [ SPANSION ]
