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AM29DL640H70WHI 参数 Datasheet PDF下载

AM29DL640H70WHI图片预览
型号: AM29DL640H70WHI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(8M ×8位/ 4米x 16位) CMOS 3.0伏只,同步读/写闪存 [64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 54 页 / 1243 K
品牌: SPANSION [ SPANSION ]
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ERASE AND PROGRAMMING PERFORMANCE  
Parameter  
Typ (Note 1)  
Max (Note 2)  
Unit  
sec  
sec  
µs  
Comments  
Sector Erase Time  
0.4  
56  
5
5
Excludes 00h programming  
prior to erasure (Note 4)  
Chip Erase Time  
Byte Program Time  
150  
120  
30  
Accelerated Byte/Word Program Time  
Accelerated Chip Programming Time  
Word Program Time  
4
µs  
10  
7
sec  
µs  
Excludes system level  
overhead (Note 5)  
210  
126  
84  
Byte Mode  
Word Mode  
42  
28  
Chip Program Time  
(Note 3)  
sec  
Notes:  
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally, programming typicals  
assume checkerboard pattern.  
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.  
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the  
maximum program times listed.  
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.  
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 12 for further  
information on command definitions.  
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.  
LATCHUP CHARACTERISTICS  
Description  
Min  
Max  
Input voltage with respect to VSS on all pins except I/O pins  
(including A9, OE#, and RESET#)  
–1.0 V  
12.5 V  
Input voltage with respect to VSS on all I/O pins  
–1.0 V  
VCC + 1.0 V  
+100 mA  
VCC Current  
–100 mA  
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.  
TSOP & BGA PIN CAPACITANCE  
Parameter Symbol  
Parameter Description  
Test Setup  
Typ  
6
Max  
7.5  
5.0  
12  
Unit  
pF  
pF  
pF  
pF  
pF  
pF  
TSOP  
CIN  
Input Capacitance  
VIN = 0  
VOUT = 0  
VIN = 0  
Fine-pitch BGA  
TSOP  
4.2  
8.5  
5.4  
7.5  
3.9  
COUT  
Output Capacitance  
Fine-pitch BGA  
TSOP  
6.5  
9
CIN2  
Control Pin Capacitance  
Fine-pitch BGA  
4.7  
Notes:  
1. Sampled, not 100% tested.  
2. Test conditions TA = 25°C, f = 1.0 MHz.  
DATA RETENTION  
Parameter Description  
Test Conditions  
150°C  
Min  
10  
Unit  
Years  
Years  
Minimum Pattern Data Retention Time  
125°C  
20  
48  
Am29DL640H  
June 7, 2005  
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