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AM29DL164DT70PCF 参数 Datasheet PDF下载

AM29DL164DT70PCF图片预览
型号: AM29DL164DT70PCF
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 1MX16, 70ns, PBGA64, 13 X 11 MM, 1.0 MM PITCH, LEAD FREE, FBGA-64]
分类和应用: 内存集成电路闪存
文件页数/大小: 57 页 / 1243 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
from “0” back to a “1.Attempting to do so may  
Enter Secured SiliconSector/Exit  
Secured Silicon Sector Command  
Sequence  
cause that bank to set DQ5 = 1, or cause the DQ7 and  
DQ6 status bits to indicate the operation was success-  
ful. However, a succeeding read will show that the  
data is still “0.Only erase operations can convert a “0”  
to a “1.”  
The system can access the Secured Silicon Sector re-  
gion by issuing the three-cycle Enter Secured Silicon  
Sector command sequence. The device continues to  
access the Secured Silicon Sector region until the sys-  
tem issues the four-cycle Exit Secured Silicon Sector  
command sequence. The Exit Secured Silicon Sector  
command sequence returns the device to normal op-  
eration. Table 14 shows the address and data  
requirements for both command sequences. See also  
“Secured Silicon Sector Flash Memory Region” for fur-  
ther information. Note that a hardware reset  
(RESET#=VIL) will reset the device to reading array  
data.  
Unlock Bypass Command Sequence  
The unlock bypass feature allows the system to pro-  
gram bytes or words to a bank faster than using the  
standard program command sequence. The unlock  
bypass command sequence is initiated by first writing  
two unlock cycles. This is followed by a third write  
cycle containing the unlock bypass command, 20h.  
The device then enters the unlock bypass mode. A  
two-cycle unlock bypass program command sequence  
is all that is required to program in this mode. The first  
cycle in this sequence contains the unlock bypass pro-  
gram command, A0h; the second cycle contains the  
program address and data. Additional data is pro-  
grammed in the same manner. This mode dispenses  
with the initial two unlock cycles required in the stan-  
dard program command sequence, resulting in faster  
total programming time. Table 14 shows the require-  
ments for the command sequence.  
Byte/Word Program Command Sequence  
The system may program the device by word or byte,  
depending on the state of the BYTE# pin. Program-  
ming is a four-bus-cycle operation. The program  
command sequence is initiated by writing two unlock  
write cycles, followed by the program set-up com-  
mand. The program address and data are written next,  
which in turn initiate the Embedded Program algo-  
rithm. The system is not required to provide further  
controls or timings. The device automatically provides  
internally generated program pulses and verifies the  
programmed cell margin. Table 14 shows the address  
and data requirements for the byte program command  
sequence.  
During the unlock bypass mode, only the Unlock By-  
pass Program and Unlock Bypass Reset commands  
are valid. To exit the unlock bypass mode, the system  
must issue the two-cycle unlock bypass reset com-  
mand sequence. The device then returns to reading  
array data.  
The device offers accelerated program operations  
through the WP#/ACC pin. When the system asserts  
When the Embedded Program algorithm is complete,  
that bank then returns to reading array data and ad-  
dresses are no longer latched. The system can  
determine the status of the program operation by  
using DQ7, DQ6, or RY/BY#. Refer to the Write Oper-  
ation Status section for information on these status  
bits.  
V
HH on the WP#/ACC pin, the device automatically en-  
ters the Unlock Bypass mode. The system may then  
write the two-cycle Unlock Bypass program command  
sequence. The device uses the higher voltage on the  
WP#/ACC pin to accelerate the operation. Note that  
the WP#/ACC pin must not be at VHH any operation  
other than accelerated programming, or device dam-  
age may result. In addition, the WP#/ACC pin must not  
be left floating or unconnected; inconsistent behavior  
of the device may result.  
Any commands written to the device during the Em-  
bedded Program Algorithm are ignored. Note that a  
hardware reset immediately terminates the program  
operation. The program command sequence should  
be reinitiated once that bank has returned to reading  
array data, to ensure data integrity.  
Figure 3 illustrates the algorithm for the program oper-  
ation. Refer to the Erase and Program Operations  
table in the AC Characteristics section for parameters,  
and Figure 17 for timing diagrams.  
Programming is allowed in any sequence and across  
sector boundaries. A bit cannot be programmed  
26  
Am29DL16xD  
21533E6 February 26, 2009  
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