D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1) Max (Note 2)
Unit
sec
sec
µs
Comments
Sector Erase Time
0.7
27
5
15
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
Byte Program Time
Word Program Time
Accelerated Byte/Word Program Time
150
210
120
27
7
µs
Excludes system level
overhead (Note 5)
4
µs
Byte Mode
Word Mode
9
Chip Program Time
(Note 3)
sec
6
18
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
14 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
VCC Current
–1.0 V
VCC + 1.0 V
+100 mA
–100 mA
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
PACKAGE AND PIN CAPACITANCE
Parameter Symbol
Parameter Description
Test Setup
TSOP/SO
Typ
6
Max
7.5
5
Unit
pF
pF
pF
pF
pF
pF
CIN
Input Capacitance
VIN = 0
VOUT = 0
VIN = 0
BGA
TSOP/SO
BGA
4.2
8.5
5.4
7.5
3.9
12
6.5
9
COUT
Output Capacitance
TSOP/SO
BGA
CIN2
Control Pin Capacitance
4.7
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter Description
Test Conditions
150°C
Min
10
Unit
Years
Years
Minimum Pattern Data Retention Time
125°C
20
50
Am29DL16xD
21533E6 February 26, 2009
SPANSION [ SPANSION ]
