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AM29BDS643GT7GVAI 参数 Datasheet PDF下载

AM29BDS643GT7GVAI图片预览
型号: AM29BDS643GT7GVAI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(4M ×16位) CMOS 1.8伏只同步读/写,突发模式闪存 [64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory]
分类和应用: 闪存
文件页数/大小: 49 页 / 718 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
COMMAND DEFINITIONS  
Writing specific address and data commands or  
sequences into the command register initiates device  
operations. Table 10 defines the valid register  
command sequences. Writing incorrect address and  
data values or writing them in the improper sequence  
resets the device to reading array data.  
The system must issue the reset command to return a  
bank to the read (or erase-suspend-read) mode if DQ5  
goes high during an active program or erase operation,  
or if the bank is in the autoselect mode. See the next  
section, Reset Command, for more information.  
See also Requirements for Asynchronous  
Read Operation (Non-Burst) and Requirements for  
Synchronous (Burst) Read Operation in the Device  
Bus Operations section for more information. The  
Asynchronous Read and Synchronous/Burst Read  
tables provide the read parameters, and Figures 9 and  
11 show the timings.  
All addresses are latched on the rising edge of AVD#.  
All data is latched on the rising edge of WE#. Refer to  
the AC Characteristics section for timing diagrams.  
Reading Array Data  
The device is automatically set to reading array data  
after device power-up. No commands are required to  
retrieve data in asynchronous mode. Each bank is  
ready to read array data after completing an Embedded  
Program or Embedded Erase algorithm.  
Set Configuration Register Command Se-  
quence  
The configuration register command sequence  
instructs the device to set a particular number of clock  
cycles for the initial access in burst mode. The number  
of wait states that should be programmed into the  
device is directly related to the clock frequency. The  
first two cycles of the command sequence are for  
unlock purposes. On the third cycle, the system should  
write C0h to the address associated with the intended  
wait state setting (see Table 8). Address bits A16–A12  
determine the setting. Note that addresses A19–A17  
are shown as “0” but are actually don’t care.  
After the device accepts an Erase Suspend command,  
the corresponding bank enters the erase-sus-  
pend-read mode, after which the system can read data  
from any non-erase-suspended sector. After com-  
pleting a programming operation in the Erase Suspend  
mode, the system may once again read array data with  
the same exception. See the Erase Suspend/Erase  
Resume Commands section for more information.  
Table 8. Burst Modes  
Third Cycle Addresses for Wait States  
Wait States  
0
1
2
3
4
5
Burst  
Mode  
Clock Cycles  
2
3
4
5
6
7
Continuous  
00555h  
08555h  
10555h  
18555h  
01555h  
09555h  
11555h  
19555h  
02555h  
0A555h  
12555h  
1A555h  
03555h  
0B555h  
13555h  
1B555h  
04555h  
0C555h  
14555h  
1C555h  
05555h  
0D555h  
15555h  
1D555h  
8-word Linear  
16-word Linear  
32-word Linear  
Note: The burst mode is set in the third cycle of the Set Wait State command sequence.  
Upon power up, the device defaults to the maximum  
seven cycle wait state setting. It is recommended that  
the wait state command sequence be written, even if  
the default wait state value is desired, to ensure the  
device is set as expected. A hardware reset will set the  
wait state to the default setting.  
Handshaking Feature  
The host system should set address bits A16–A12 to  
“00010” for a clock frequency of 40 MHz or to “00011”  
for a clock frequency of 54 or 66 MHz, assuming con-  
tinuous burst is desired in both cases.  
Table 9 describes the typical number of clock cycles  
(wait states) for various conditions.  
20  
Am29BDS643G  
25692A2 May 8, 2006