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AM29BL802CB-90R 参数 Datasheet PDF下载

AM29BL802CB-90R图片预览
型号: AM29BL802CB-90R
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 512K的x 16位) CMOS 3.0伏只突发模式闪存 [8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory]
分类和应用: 闪存
文件页数/大小: 46 页 / 772 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
REVISION SUMMARY  
Burst Mode Read with 40 MHz CLK figure  
Changed t for the 65R speed option in the indus-  
trial temperature range from 19 to 18 ns.  
Revision A (June 1, 1999)  
Initial release.  
BACC  
Revision A+1 (June 25, 1999)  
Read Operations table  
General Description  
Changed t  
and t for the 65R speed option in the  
OE DF  
industrial temperature range from 19 to 18 ns.  
Corrected the device density in the first paragraph.  
Burst Mode Read table  
Command Definitions  
Changed t and t  
industrial temperature range from 19 to 18 ns.  
for the 65R speed option in the  
Reading Array Data in Burst Mode: Added reference to  
Figure 3 in the first paragraph.  
OE  
BACC  
Burst Mode Read figure  
Corrected BAA# waveform to return high before the  
final clock cycle shown.  
Revision B (November 29, 1999)  
Global  
All speed options are now offered only at the regulated  
voltage range of 3.0 to 3.6 V. The 90 and 120 speed  
Erase and Programming Performance table, Erase  
and Program Operations table, Alternate CE# Con-  
trolled Erase and Program Operations table  
Resolved differences in typical sector erase times. The  
typical sector erase time for all sectors is 3 sec.  
options now have a t of 26 ns at the industrial tem-  
OE  
perature range. The 70 ns speed option is now avail-  
able at the extended temperature range.  
AC Characteristics  
Revision C+1 (November 16, 2000)  
Global  
In Figures 17 and 18, deleted t  
waveform.  
; modified OE#  
GHWL  
Physical Dimensions  
Updated drawing of SSOP to new version.  
Deleted Preliminary status from document. Added  
table of contents. Added Figure 1, In-system Sector  
Protect/Unprotect Algorithms figure to document (was  
missing from previous revisions).  
Revision C (June 20, 2000)  
Global  
Revision C+2 (July 22, 2002)  
Pin Description, IND# End of Burst Indicator  
Clarified description of IND# function.  
The “advance information” data sheet designation has  
been changed to “preliminary.” Only minor parameter  
changes, if any, may occur. Speed, package, and tem-  
perature range combinations may also change in future  
data sheet revisions.  
Table 1, Device Bus Operations  
In burst read operations section, changed BAA# to “H”  
for “Load starting Burst Address” and Terminate  
Current Burst Read Cycle; Start New Burst Read  
Cycle.”  
Distinctive Characteristics  
Changed burst access time specification for the 65R  
speed option in the industrial temperature range from  
19 to 18 ns.  
Requirements for Reading Array Data in Synchro-  
nous (Burst) Mode  
Product Selector Guide  
Modified section to clarify the description of the IND#  
and burst read functions.  
Replaced t  
with t  
to more clearly distinguish  
OE  
BACC  
burst mode access from asynchronous access times.  
Note however, that in burst mode, t and t spec-  
ifications are identical. Changed t  
speed option in the industrial temperature range from  
19 to 18 ns.  
OE  
BACC  
Burst Sequence Table  
Deleted table.  
for the 65R  
BACC  
Revision C+3 (November 22, 2002)  
Distinctive Characteristics  
Changed endurance to 1 million cycles.  
Ordering Information  
Burn-in processing is no longer available.  
Requirements for Reading Array Data Array in  
Asynchronous (Non-Burst) Mode  
Clarified the description of how to terminate a burst  
mode read operation.  
Erase Suspend/Erase Resume Command  
Sequence  
Noted that only asynchronous reads are allowed during  
the erase suspend mode, added asynchronous mode  
and burst mode section.  
November 3, 2006 22371C7  
Am29BL802C  
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