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AM29BL802CB-90R 参数 Datasheet PDF下载

AM29BL802CB-90R图片预览
型号: AM29BL802CB-90R
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 512K的x 16位) CMOS 3.0伏只突发模式闪存 [8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory]
分类和应用: 闪存
文件页数/大小: 46 页 / 772 K
品牌: SPANSION [ SPANSION ]
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DATA SHEET
Am29BL802C
8 Megabit (512 K x 16-Bit)
CMOS 3.0 Volt-only Burst Mode Flash Memory
DISTINCTIVE CHARACTERISTICS
32 words sequential with wrap around (linear
32), bottom boot
One 8 Kword, two 4 Kword, one 48 Kword, three
64 Kword, and two 128 Kword sectors
Single power supply operation
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
Read access times
Burst access times as fast as 17 ns at industrial
temperature range (18 ns at extended
temperature range)
Initial/random access times as fast as 65 ns
Alterable burst length via BAA# pin
Power dissipation (typical)
— Burst Mode Read: 15 mA @ 25 MHz,
20 mA @ 33 MHz, 25 mA @ 40 MHz
— Program/Erase: 20 mA
— Standby mode, CMOS: 3 µA
5 V-tolerant data, address, and control signals
Sector Protection
— Implemented using in-system or via
programming equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
Minimum 100,000 erase cycle guarantee
per sector
20-year data retention
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
— Backward-compatible with AMD Am29LV and
Am29F flash memories: powers up in
asynchronous mode for system boot, but can
immediately be placed into burst mode
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
Hardware reset pin (RESET#)
— Hardware method to reset the device for reading
array data
Package Option
— 56-pin SSOP
This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
22371
Rev:
C
Amendment:
7
Issue Date:
November 3, 2006