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AM29BL802C65RZF 参数 Datasheet PDF下载

AM29BL802C65RZF图片预览
型号: AM29BL802C65RZF
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 512K的x 16位) CMOS 3.0伏只突发模式闪存 [8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory]
分类和应用: 闪存
文件页数/大小: 46 页 / 772 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
the device. The first burst data is available after the  
initial access time (t ) from the rising edge of the  
CLK that loads the burst address. After the initial  
Requirements for Reading Array Data  
Array in Asynchronous (Non-Burst) Mode  
To read array data from the outputs, the system must  
IACC  
access, subsequent burst data is available t  
each rising edge of CLK.  
after  
BACC  
drive the CE# and OE# pins to V . CE# is the power  
IL  
control and selects the device. OE# is the output control  
and gates array data to the output pins. WE# should re-  
The device increments the address at each rising edge  
of the clock cycles while BAA# is asserted low. The 5-  
bit burst address counter is set to 00000b at the  
starting address. When the burst address counter is  
reaches 11111b, the device outputs the last word in the  
burst sequence, and outputs a low on IND#. If the  
system continues to assert BAA#, on the next CLK the  
device will output the data for the starting address—the  
burst address counter will have “wrapped around” to  
00000b. For example, if the initial address is xxxx0h,  
the data order will be 0-1-2-3.....28-29-30-31-0-1...; if  
the initial address is xxxx2h, the data order will be 2-3-  
4-5.....28-29-30-31-0-1-2-3...; if the initial address is  
xxxx8h, the data order will be 8-9-10-11.....30-31-0-1-  
2-3-4-5-6-7-8-9....; and so on. Data will be repeated if  
more than 32 clocks are supplied, and BAA# remains  
asserted low.  
main at V .  
IH  
Address access time (t  
) is equal to the delay from  
ACC  
stable addresses to valid output data. The chip enable  
access time (t ) is the delay from the stable  
CE  
addresses and stable CE# to valid data at the output  
pins. The output enable access time is the delay from  
the falling edge of OE# to valid data at the output pins  
(assuming the addresses have been stable for at least  
t
–t time).  
ACC OE  
The internal state machine is set for reading array  
data in the upon device power-up, or after a hardware  
reset. This ensures that no spurious alteration of the  
memory content occurs during the power transition.  
No command is necessary in this mode to obtain array  
data. Standard microprocessor read cycles that as-  
sert valid addresses on the device address inputs pro-  
duce valid data on the device data outputs. The device  
remains enabled for read access until the command  
register contents are altered.  
A burst mode read operation is terminated using one of  
three methods:  
— In the first method, CE# is asserted high. The  
device in this case remains in burst mode;  
asserting LBA# low terminates the previous  
burst read cycle and starts a new burst read  
cycle with the address that is currently valid.  
See “Reading Array Data in Non-burst Mode” for more  
information. Refer to the AC Read Operations table for  
timing specifications and to Figure 15 for the timing di-  
agram. I  
in the DC Characteristics table represents  
CC1  
— In the second method, the Burst Disable  
command sequence is written to the device. The  
device halts the burst operation and returns to  
the asynchronous mode.  
the active current specification for reading array data.  
Requirements for Reading Array Data in  
Synchronous (Burst) Mode  
The device offers fast 32-word sequential burst reads  
and is used to support microprocessors that implement  
an instruction prefetch queue, as well as large data  
transfers during system configuration.  
— In the third method, RESET# is asserted low. All  
opertations are immediately terminated, and the  
device will revert to the asynchronous mode.  
Note that writing the reset command will not terminate  
the burst mode.  
Three additional pins—Load Burst Address (LBA#),  
Burst Address Advance (BAA#), and Clock (CLK)—  
allow interfacing to microprocessors and microcontrol-  
lers with minimal glue logic. Burst mode read is a syn-  
chronous operation tied to the rising edge of CLK. CE#,  
OE#, and WE# are asynchronous (relative to CLK).  
Burst Suspend/Burst Resume Operations  
The device offers Burst Suspend and Burst Resume  
operations. When both OE# and BAA# are taken high,  
the device removes (“suspends”) the data from the  
outputs (because OE# is high), but “holds” the data  
internally. The device resumes burst operation when  
either OE# and/or BAA# is asserted low. Asserting the  
OE# only causes the device to present the same data  
that was held during the Burst Suspend operation. As  
long as BAA# is high, the device will continue to output  
that word of data. Asserting both OE# and BAA# low  
resumes the burst operation, and on the next rising  
edge of CLK, increments the counter and outputs the  
next word of data.  
When the device is in asynchronous mode (after  
power-up or RESET# pulse), any signals on the CLK,  
LBA#, and BAA# inputs are ignored. The device oper-  
ates as a conventional flash device, as described in the  
previous section.  
To enable burst mode operation, the system must issue  
the Burst Mode Enable command sequence (see Table  
4). After the device has entered the burst mode, the  
system must assert Load Burst Address (LBA#) low for  
one clock period, which loads the starting address into  
November 3, 2006 22371C7  
Am29BL802C  
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