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AM29BL162CB-65R 参数 Datasheet PDF下载

AM29BL162CB-65R图片预览
型号: AM29BL162CB-65R
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 1一M× 16位) CMOS 3.0伏只突发模式闪存 [16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory]
分类和应用: 闪存
文件页数/大小: 50 页 / 843 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
GENERAL DESCRIPTION  
The Am29BL162C is a 16 Mbit, 3.0 Volt-only burst  
mode Flash memory devices organized as 1,048,576  
words. The device is offered in a 56-pin SSOP  
package. These devices are designed to be pro-  
grammed in-system with the standard system 3.0-volt  
VCC supply. A 12.0-volt VPP or 5.0 VCC is not required  
for program or erase operations. The device can also  
be programmed in standard EPROM programmers.  
The sector erase architecture allows memory sectors  
to be erased and reprogrammed without affecting the  
data contents of other sectors. The device is fully  
erased when shipped from the factory.  
Hardware data protection measures include a low VCC  
detector that automatically inhibits write operations dur-  
ing power transitions. The hardware sector protection  
feature disables both program and erase operations in  
any combination of the sectors of memory. This can be  
achieved in-system or via programming equipment.  
The device offers access times of 65, 70, 90, and 120  
ns, allowing high speed microprocessors to operate  
without wait states. To eliminate bus contention the  
device has separate chip enable (CE#), write enable  
(WE#) and output enable (OE#) controls.  
The Erase Suspend/Erase Resume feature enables  
the user to put erase on hold for any period of time to  
read data from, or program data to, any sector that is  
not selected for erasure. True background erase can  
thus be achieved.  
Burst Mode Features  
The Am29BL162C offers a Linear Burst mode—a  
32 word sequential burst with wrap around—in a  
bottom boot configuration only. This devices require  
additional control pins for burst operations: Load  
Burst Address (LBA#), Burst Address Advance  
(BAA#), and Clock (CLK). This implementation allows  
easy interface with minimal glue logic to a wide range  
of microprocessors/microcontrollers for high perfor-  
mance read operations.  
The hardware RESET# pin terminates any operation  
in progress and resets the internal state machine to  
reading array data. The RESET# pin may be tied to the  
system reset circuitry. A system reset would thus also  
reset the device, enabling the system microprocessor  
to read the boot-up firmware from the Flash memory.  
The device offers two power-saving features. When ad-  
dresses have been stable for a specified amount of  
time, the device enters the automatic sleep mode.  
The system can also place the device into the standby  
mode. Power consumption is greatly reduced in both  
these modes.  
AMD Flash Memory Features  
Each device requires only a single 3.0 volt power  
supply for both read and write functions. Internally  
generated and regulated voltages are provided for the  
program and erase operations. The I/O and control  
signals are 5V tolerant.  
AMD’s Flash technology combines years of Flash  
memory manufacturing experience to produce the  
highest levels of quality, reliability and cost effectiveness.  
The device electrically erases all bits within a sector  
simultaneously via Fowler-Nordheim tunneling. The  
data is programmed using hot electron injection.  
The device is entirely command set compatible with the  
JEDEC single-power-supply Flash standard. Com-  
mands are written to the command register using stan-  
dard microprocessor write timings. Register contents  
serve as input to an internal state-machine that con-  
trols the erase and programming circuitry. Write cycles  
also internally latch addresses and data needed for the  
programming and erase operations. Reading data out  
of the device is similar to reading from other Flash or  
EPROM devices.  
Device erasure occurs by executing the erase com-  
mand sequence. This initiates the Embedded Erase  
algorithm—an internal algorithm that automatically  
preprograms the array (if it is not already programmed)  
before executing the erase operation. During erase, the  
device automatically times the erase pulse widths and  
verifies proper cell margin.  
The host system can detect whether a program or  
erase operation is complete by observing the RY/BY#  
pin, or by reading the DQ7 (Data# Polling) and DQ6  
(toggle) status bits. After a program or erase cycle has  
been completed, the device is ready to read array data  
or accept another command.  
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Am29BL162C  
July 8, 2005  
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