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AM29BDS640HF8VMF 参数 Datasheet PDF下载

AM29BDS640HF8VMF图片预览
型号: AM29BDS640HF8VMF
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 4MX16, 45ns, PBGA64, FBGA-64]
分类和应用: 内存集成电路
文件页数/大小: 85 页 / 2840 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y I n f o r m a t i o n  
ther commands (except Erase Suspend) are ignored  
mand. If DQ3 is high on the second status check, the  
last command might not have been accepted.  
until the erase operation is complete. If DQ3 is “0,the  
device will accept additional sector erase commands.  
To ensure the command has been accepted, the sys-  
tem software should check the status of DQ3 prior to  
and following each subsequent sector erase com-  
Table 23 shows the status of DQ3 relative to the other  
status bits.  
Table 23. Write Operation Status  
DQ5  
(Note  
1)  
DQ7  
DQ2  
(Note 2)  
RDY  
(Note 5)  
Status  
(Note 2)  
DQ7#  
0
DQ6  
DQ3  
N/A  
1
Embedded Program Algorithm  
Embedded Erase Algorithm  
Toggle  
Toggle  
0
0
No toggle  
Toggle  
0
0
Standard  
Mode  
High  
Impedanc  
e
Erase  
Suspended Sector  
1
No toggle  
0
N/A  
Toggle  
Erase-Suspend-  
Read (Note 4)  
Erase  
Suspend  
Mode  
High  
Impedanc  
e
Non-Erase  
Suspended Sector  
Data  
Data  
Data  
0
Data  
N/A  
Data  
N/A  
Erase-Suspend-Program  
DQ7#  
Toggle  
0
Notes:  
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.  
Refer to the section on DQ5 for more information.  
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for  
further details.  
3. When reading write operation status bits, the system must always provide the bank address where the Embedded  
Algorithm is in progress. The device outputs array data if the system addresses a non-busy bank.  
4. The system may read either asynchronously or synchronously (burst) while in erase suspend.  
5. The RDY pin acts a dedicated output to indicate the status of an embedded erase or program operation is in  
progress. This is available in the Asynchronous mode only.  
Absolute Maximum Ratings  
Storage Temperature  
Plastic Packages –65°C to +150°C  
V
V
(Note 1)  
–0.5 V to +2.5 V  
–0.5 V to +2.5 V  
CC  
IO  
Ambient Temperature  
with Power Applied–65°C to +125°C  
A9, RESET#, ACC (Note 1)–0.5 V to +12.5 V  
Output Short Circuit Current (Note 3)100  
mA  
Voltage with Respect to Ground:  
All Inputs and I/Os except  
as noted below (Note 1)–0.5 V to V + 0.5 V  
IO  
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs or I/Os may undershoot VSS to –  
2.0 V for periods of up to 20 ns. See Figure 10. Maximum DC voltage on input or I/Os is VCC + 0.5 V. During voltage  
transitions outputs may overshoot to VCC + 2.0 V for periods up to 20 ns. See Figure 11.  
2. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater  
than one second.  
3. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is  
a stress rating only; functional operation of the device at these or any other conditions above those indicated in the  
operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions  
for extended periods may affect device reliability.  
June 18, 2004 27024_A5_00_E  
Am29BDS128H/Am29BDS064H  
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