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AM29BDS640GT93WSF 参数 Datasheet PDF下载

AM29BDS640GT93WSF图片预览
型号: AM29BDS640GT93WSF
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 4MX16, 20ns, PBGA80, 11 X 12 MM, FBGA-80]
分类和应用: 内存集成电路
文件页数/大小: 62 页 / 863 K
品牌: SPANSION [ SPANSION ]
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A D V A N C E I N F O R M A T I O N  
The internal state machine is set for reading array data  
If the host system crosses the bank boundary while  
reading in burst mode, and the device is not program-  
ming or erasing, a two-cycle latency will occur as  
described above in the subsequent bank. If the host  
system crosses the bank boundary while the device is  
programming or erasing, the device will provide read  
status information. The clock will be ignored. After the  
host has completed status reads, or the device has  
completed the program or erase operation, the host  
can restart a burst operation using a new address and  
AVD# pulse.  
upon device power-up, or after a hardware reset. This  
ensures that no spurious alteration of the memory  
content occurs during the power transition.  
Requirements for Synchronous (Burst)  
Read Operation  
The device is capable of continuous sequential burst  
operation and linear burst operation of a preset length.  
When the device first powers up, it is enabled for asyn-  
chronous read operation.  
If the clock frequency is less than 6 MHz during a burst  
mode operation, additional latencies will occur. RDY  
indicates the length of the latency by pulsing low.  
Prior to entering burst mode, the system should deter-  
mine how many wait states are desired for the initial  
word (tIACC) of each burst access, what mode of burst  
operation is desired, which edge of the clock will be the  
active clock edge, and how the RDY signal will transi-  
tion with valid data. The system would then write the  
burst mode configuration register command sequence.  
See “Set Burst Mode Configuration Register Command  
Sequence” and “Command Definitions” for further  
details.  
8-, 16-, and 32-Word Linear Burst with Wrap Around  
The remaining three modes are of the linear wrap  
around design, in which a fixed number of words are  
read from consecutive addresses. In each of these  
modes, the burst addresses read are determined by  
the group within which the starting address falls. The  
groups are sized according to the number of words  
read in a single burst sequence for a given mode (see  
Table 2.)  
Once the system has written the “Set Burst Mode Con-  
figuration Register” command sequence, the device is  
enabled for synchronous reads only.  
Table 2. Burst Address Groups  
The initial word is output tIACC after the active edge of  
the first CLK cycle. Subsequent words are output tBACC  
after the active edge of each successive clock cycle,  
which automatically increments the internal address  
counter. Note that the device has a fixed internal  
address boundary that occurs every 64 words, starting  
at address 00003Fh. During the time the device is out-  
putting data at this fixed internal address boundary  
(address 00003Fh, 00007Fh, 0000BFh, etc.), a two  
cycle latency occurs before data appears for the next  
address (address 000040h, 000080h, 0000C0h, etc.).  
The RDY output indicates this condition to the system  
by pulsing low. For non-handshaking devices, there is  
no two cycle latency between 3Fh and 40h (or multiple  
thereof). See Table 10.  
Mode  
8-word  
16-word  
32-word  
Group Size Group Address Ranges  
8 words  
16 words  
32 words  
0-7h, 8-Fh, 10-17h, ...  
0-Fh, 10-1Fh, 20-2Fh, ...  
00-1Fh, 20-3Fh, 40-5Fh, ...  
As an example: if the starting address in the 8-word  
mode is 39h, the address range to be read would be  
38-3Fh, and the burst sequence would be  
39-3A-3B-3C-3D-3E-3F-38h-etc. The burst sequence  
begins with the starting address written to the device,  
but wraps back to the first address in the selected  
group. In a similar fashion, the 16-word and 32-word  
Linear Wrap modes begin their burst sequence on the  
starting address written to the device, and then wrap  
back to the first address in the selected address group.  
Note that in these three burst read modes the  
address pointer does not cross the boundary that  
occurs every 64 words; thus, no wait states are  
inserted (except during the initial access).  
For handshaking devices, if the address latched is 3Dh  
(or 64 multiple), an additional cycle latency occurs prior  
to the initial access. If the address latched is 3Eh (or 64  
multiple) two additional cycle latency occurs prior to the  
initial access and the 2 cycle latency between 3Fh and  
40h (or 64 multiple) will not occur. For 3Fh latched  
addresses (or 64 multiple) three additional cycle  
latency occurs prior to the initial access and the 2 cycle  
latency between 3Fh and 40h (or 64 multiple) will not  
occur.  
The RDY pin indicates when data is valid on the bus.  
The devices can wrap through a maximum of 128  
words of data (8 words up to 16 times, 16 words up to  
8 times, or 32 words up to 4 times) before requiring a  
new synchronous access (latching of a new address).  
The device will continue to output sequential burst  
data, wrapping around to address 000000h after it  
reaches the highest addressable memory location,  
until the system drives CE# high, RESET# low, or  
AVD# low in conjunction with a new address. See  
Table 1, “Device Bus Operations,” on page 10.  
Burst Mode Configuration Register  
The device uses a configuration register to set the  
various burst parameters: number of wait states, burst  
May 9, 2002  
Am29BDS640G  
11  
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