DATA SHEET
Am29BDS128H/Am29BDS640H
128 or 64 Megabit (8 M or 4 M x 16-Bit)
CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
The Am29BDS640H has been retired and is not recommended for designs. For new designs, S29WS064K supersedes Am29BDS640H. Please refer to the S29WS-K family data sheet for
specifications and ordering information. The Am29BDS128H is available and is not affected by this revision.
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
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Single 1.8 volt read, program and erase (1.65 to 1.95 volt)
Manufactured on 0.13 µm process technology
VersatileIO™ (V
IO
) Feature
— Device generates data output voltages and tolerates data
input voltages as determined by the voltage on the V
IO
pin
— 1.8V compatible I/O signals
Simultaneous Read/Write operation
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
— Four bank architecture:
128 Mb has 16/48/48/16 Mbit banks
64 Mb has 8/24/24/8 Mbit banks
Programable Burst Interface
— 2 Modes of Burst Read Operation
— Linear Burst: 8, 16, and 32 words with wrap-around
— Continuous Sequential Burst
SecSi
TM
(Secured Silicon) Sector region
— Up to 128 words accessible through a command sequence
— Up to 64 factory-locked words
— Up to 64 customer-lockable words
Sector Architecture
— Banks A and D each contain both 4 Kword sectors and 32
Kword sectors; Banks B and C contain ninety-six 32 Kword
sectors
— Sixteen 4 Kword boot sectors
Half of the boot sectors are at the top of the address range;
half are at the bottom of address range
Minimum 1 million erase cycle guarantee per sector
20-year data retention at 125°C
— Reliable operation for the life of the system
80-ball FBGA package (128 Mb) or 64-ball FBGA (64 Mb)
package
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HARDWARE FEATURES
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Handshaking feature
— Provides host system with minimum possible latency by
monitoring RDY
— Reduced Wait-state handshaking option further reduces
initial access cycles required for burst accesses beginning on
even addresses
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Hardware reset input (RESET#)
— Hardware method to reset the device for reading array data
WP# input
— Write protect (WP#) function allows protection of the four
highest and four lowest 4 kWord boot sectors, regardless of
sector protect status
Persistent Sector Protection
— A command sector protection method to lock combinations of
individual sectors and sector groups to prevent program or
erase operations within that sector
— Sectors can be locked and unlocked in-system at V
CC
level
Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups to
prevent program or erase operations within that sector using
a user-defined 64-bit password
ACC input: Acceleration function reduces programming
time; all sectors locked when ACC = V
IL
CMOS compatible inputs, CMOS compatible outputs
Low V
CC
write inhibit
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SOFTWARE FEATURES
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Supports Common Flash Memory Interface (CFI)
Software command set compatible with JEDEC 42.4
standards
— Backwards compatible with Am29F and Am29LV families
Data# Polling and toggle bits
— Provides a software method of detecting program and erase
operation completion
Erase Suspend/Resume
— Suspends an erase operation to read data from, or program
data to, a sector that is not being erased, then resumes the
erase operation
Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
program command sequences
Burst Suspend/Resume
— Suspends a burst operation to allow system use of the
address and data bus, than resumes the burst at the previous
state
Publication#
27024
Rev:
B
Amendment:
3
Issue Date:
May 10, 2006
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PERFORMANCE CHARCTERISTICS
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Read access times at 75/66/54 MHz (C
L
=30 pF)
— Burst access times of 9.3/11/13.5 ns at industrial
temperature range
— Synchronous latency of 49/56/69 ns
— Asynchronous random access times of 45/50/55 ns
Power dissipation (typical values, C
L
= 30 pF)
— Burst Mode Read: 10 mA
— Simultaneous Operation: 25 mA
— Program/Erase: 15 mA
— Standby mode: 0.2 µA
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SPANSION [ SPANSION ]
