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AM29BDS128HE8VMI 参数 Datasheet PDF下载

AM29BDS128HE8VMI图片预览
型号: AM29BDS128HE8VMI
PDF下载: 下载PDF文件 查看货源
内容描述: 128或64兆比特( 8 M或4米×16位) CMOS 1.8伏只同步读/写,突发模式闪存 [128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory]
分类和应用: 闪存
文件页数/大小: 89 页 / 1587 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
cause DQ6 to toggle. When the operation is complete,  
RDY: Ready  
DQ6 stops toggling.  
The RDY is a dedicated output that, when the device is  
configured in the Synchronous mode, indicates (when  
at logic low) the system should wait 1 clock cycle before  
expecting the next word of data. The RDY pin is only  
controlled by CE#. Using the RDY Configuration  
Command Sequence, RDY can be set so that a logic  
low indicates the system should wait 2 clock cycles  
before expecting valid data.  
After an erase command sequence is written, if all  
sectors selected for erasing are protected, DQ6 toggles  
for approximately t  
time, then returns to reading array data. If not all  
selected sectors are protected, the Embedded Erase  
algorithm erases the unprotected sectors, and ignores  
the selected sectors that are protected.  
, all sectors protected toggle  
ASP  
The following conditions cause the RDY output to be  
low: during the initial access (in burst mode), and after  
the boundary that occurs every 64 words beginning  
with the 64th address, 3Fh.  
The system can use DQ6 and DQ2 together to deter-  
mine whether a sector is actively erasing or is  
erase-suspended. When the device is actively erasing  
(that is, the Embedded Erase algorithm is in progress),  
DQ6 toggles. When the device enters the Erase  
Suspend mode, DQ6 stops toggling. However, the  
system must also use DQ2 to determine which sectors  
are erasing or erase-suspended. Alternatively, the  
system can use DQ7 (see the subsection on DQ7:  
Data# Polling).  
When the device is configured in Asynchronous Mode,  
the RDY is an open-drain output pin which indicates  
whether an Embedded Algorithm is in progress or com-  
pleted. The RDY status is valid after the rising edge of  
the final WE# pulse in the command sequence.  
If the output is low (Busy), the device is actively erasing  
or programming. (This includes programming in the  
Erase Suspend mode.) If the output is in high imped-  
ance (Ready), the device is in the read mode, the  
standby mode, or in the erase-suspend-read mode.  
Table 23, “Write Operation Status,on page 52 shows  
the outputs for RDY.  
If a program address falls within a protected sector,  
DQ6 toggles for approximately t  
after the program  
PSP  
command sequence is written, then returns to reading  
array data.  
DQ6 also toggles during the erase-suspend-program  
mode, and stops toggling once the Embedded  
Program algorithm is complete.  
DQ6: Toggle Bit I  
See the following for additional information: Figure 9,  
Toggle Bit Algorithm,on page 50, “DQ6: Toggle Bit I”  
on page 49, Figure 41, Toggle Bit Timings  
(During Embedded Algorithm),on page 76 (toggle bit  
timing diagram), and Table 22, “DQ6 and DQ2 Indica-  
tions,on page 51.  
Toggle Bit I on DQ6 indicates whether an Embedded  
Program or Erase algorithm is in progress or complete,  
or whether the device has entered the Erase Suspend  
mode. Toggle Bit I may be read at any address in the  
same bank, and is valid after the rising edge of the final  
WE# pulse in the command sequence (prior to the  
program or erase operation), and during the sector  
erase time-out.  
Toggle Bit I on DQ6 requires either OE# or CE# to be  
deasserted and reasserted to show the change in  
state.  
During an Embedded Program or Erase algorithm  
operation, successive read cycles to any address  
May 10, 2006 27024B3  
Am29BDS128H/Am29BDS640H  
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