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AM29BDD160GB54DKK 参数 Datasheet PDF下载

AM29BDD160GB54DKK图片预览
型号: AM29BDD160GB54DKK
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 512KX32, 54ns, PQFP80, LEAD FREE, PLASTIC, MO-108CB-1, QFP-80]
分类和应用: 内存集成电路闪存
文件页数/大小: 79 页 / 1482 K
品牌: SPANSION [ SPANSION ]
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COMMAND DEFINITIONS  
Writing specific address and data commands or se-  
quences into the command register initiates device op-  
erations. Tables 18-21 define the valid register  
command sequences. Writing incorrect address and  
data values or writing them in the improper se-  
quence resets the device to reading array data.  
The RESET# command will not terminate the Burst  
mode. System reset (power on reset) will terminate  
the Burst mode.  
The device has the regular control pins, i.e. Chip En-  
able (CE#), Write Enable (WE#), and Output Enable  
(OE#) to control normal read and write operations.  
Moreover, three additional control pins have been  
added to allow easy interface with minimal glue logic  
to a wide range of microprocessors / microcontrollers  
for high performance Burst read capability. These ad-  
ditional pins are Address Valid (ADV#) and Clock  
(CLK). CE#, OE#, and WE# are asynchronous (rela-  
tive to CLK). The Burst mode read operation is a syn-  
chronous operation tied to the edge of the clock. The  
microprocessor / microcontroller supplies only the ini-  
tial address, all subsequent addresses are automati-  
cally generated by the device with a timing defined by  
the Configuration Register definition. The Burst read  
cycle consists of an address phase and a correspond-  
ing data phase.  
All addresses are latched on the falling edge of WE#  
or CE#, whichever happens later. All data is latched on  
the rising edge of WE# or CE#, whichever happens  
first. Refer to the AC Characteristics section for timing  
diagrams.  
Reading Array Data in Non-burst Mode  
The device is automatically set to reading array data  
after device power-up. No commands are required to  
retrieve data. The device is also ready to read array  
data after completing an Embedded Program or Em-  
bedded Erase algorithm.  
After the device accepts an Erase Suspend com-  
mand, the device enters the Erase Suspend mode.  
The system can read array data using the standard  
read timings, except that if it reads at an address  
within erase-suspended sectors, the device outputs  
status data. After completing a programming opera-  
tion in the Erase Suspend mode, the system may  
once again read array data with the same exception.  
See Sector Erase and Program Suspend Command  
for more information on this mode.  
During the address phase, the Address Valid (ADV#)  
pin is asserted (taken Low) for one clock period. To-  
gether with the edge of the CLK, the starting burst ad-  
dress is loaded into the internal Burst Address  
Counter. The internal Burst Address Counter can be  
configured to either the Linear modes (See “Initial Ac-  
cess Delay Configuration”).  
During the data phase, the first burst data is available  
after the initial access time delay defined in the Config-  
uration Register. For subsequent burst data, every ris-  
ing (or falling) edge of the CLK will trigger the output  
data with the burst output delay and sequence defined  
in the Configuration Register.  
The system must issue the reset command to re-en-  
able the device for reading array data if DQ5 goes high,  
or while in the autoselect mode. See the The program-  
ming of the PPB Lock Bit for a given sector can be ver-  
ified by writing a PPB Lock Bit status verify command  
to the device. section.  
Tables 17–20 show all the commands executed by the  
device. The device automatically powers up in the  
read/reset state. It is not necessary to issue a read/re-  
set command after power-up or hardware reset.  
See also Asynchronous Read Operation (Non-Burst) in  
the Key to Switching Waveforms section for more  
information. See the Sector Erase and Program Resume  
Command sections for more information on this mode.  
Read/Reset Command  
Reading Array Data in Burst Mode  
After power-up or hardware reset, the Am29BDD160  
automatically enter the read state. It is not necessary  
to issue the reset command after power-up or hard-  
ware reset. Standard microprocessor cycles retrieve  
array data, however, after power-up, only asynchro-  
nous accesses are permitted since the Configuration  
Register is at its reset state with burst accesses dis-  
abled.  
The device is capable of very fast Burst mode read op-  
erations. The configuration register sets the read con-  
figuration, burst order, frequency configuration, and  
burst length.  
Upon power on, the device defaults to the asynchro-  
nous mode. In this mode, CLK, and ADV# are ignored.  
The device operates like a conventional Flash device.  
Data is available tACC/tCE nanoseconds after address  
becomes stable, CE# become asserted. The device  
enters the burst mode by enabling synchronous burst  
reads in the configuration register. The device exits  
burst mode by disabling synchronous burst reads in  
the configuration register. (See Command Definitions).  
The Reset command is executed when the user needs  
to exit any of the other user command sequences  
(such as autoselect, program, chip erase, etc.) to re-  
turn to reading array data. There is no latency be-  
tween executing the Reset command and reading  
array data.  
34  
Am29BDD160G  
June 7, 2006  
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