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AM28F256A-70EE 参数 Datasheet PDF下载

AM28F256A-70EE图片预览
型号: AM28F256A-70EE
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32KX8, 70ns, PDSO32, TSOP-32]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 35 页 / 461 K
品牌: SPANSION [ SPANSION ]
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CE#  
t
OEH  
WE#  
OE#  
*
DQ6  
Stop Toggling  
Data  
DQ0–DQ7  
DQ0–DQ7  
Valid  
DQ6 =  
DQ6 =  
t
OE  
18879C-11  
Note:  
*DQ6 stops toggling (The device has completed the Embedded operation.)  
Figure 6. AC Waveforms for Toggle Bit during Embedded Algorithm Operations  
Power-Up/Power-Down Sequence  
DQ5  
The device powers-up in the Read only mode. Power  
supply sequencing is not required. Note that if VCC  
1.0 Volt, the voltage difference between VPP and VCC  
should not exceed 10.0 Volts. Also, the device has a  
Exceeded Timing Limits  
DQ5 will indicate if the program or erase time has  
exceeded the specified limits. This is a failure condi-  
tion and the device may not be used again (internal  
pulse count exceeded). Under these conditions DQ5  
will produce a “1.” The program or erase cycle was not  
successfully completed. Data# Polling is the only op-  
erating function of the device under this condition. The  
CE# circuit will partially power down the device under  
these conditions (to approximately 2 mA). The OE#  
and WE# pins will control the output disable functions  
as described in the Command Definitions table in the  
corresponding device data sheet.  
rise V rise time and fall time specification of 500 ns  
PP  
minimum.  
Reset Command  
The Reset command initializes the Flash memory de-  
vice to the Read mode. In addition, it also provides the  
user with a safe method to abort any device operation  
(including program or erase).  
The Reset must be written two consecutive times after  
the Setup Program command (10h or 50h). This will  
reset the device to the Read mode.  
Parallel Device Erasure  
The Embedded Erase algorithm greatly simplifies par-  
allel device erasure. Since the erase process is internal  
to the device, a single erase command can be given to  
multiple devices concurrently. By implementing a paral-  
lel erase algorithm, total erase time may be minimized.  
Following any other Flash command, write the Reset  
command once to the device. This will safely abort any  
previous operation and initialize the device to the Read  
mode.  
The Setup Program command (10h or 50h) is the only  
command that requires a two-sequence reset cycle. The  
first Reset command is interpreted as program data.  
However, FFh data is considered as null data during pro-  
gramming operations (memory cells are only pro-  
grammed from a logical “1" to “0"). The second Reset  
command safely aborts the programming operation and  
resets the device to the Read mode.  
Note that the Flash memories may erase at different  
rates. If this is the case, when a device is completely  
erased, use a masking code to prevent further erasure  
(over-erasure). The other devices will continue to erase  
until verified. The masking code applied could be the  
read command (00h).  
Memory contents are not altered in any case.  
Am28F256A  
17  
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