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AM27X128-120PI 参数 Datasheet PDF下载

AM27X128-120PI图片预览
型号: AM27X128-120PI
PDF下载: 下载PDF文件 查看货源
内容描述: [OTP ROM, 16KX8, 120ns, CMOS, PDIP28, PLASTIC, DIP-28]
分类和应用: OTP只读存储器有原始数据的样本ROM光电二极管内存集成电路
文件页数/大小: 10 页 / 139 K
品牌: SPANSION [ SPANSION ]
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FUNCTIONAL DESCRIPTION  
Read Mode  
CE# should be decoded and used as the primary de-  
vice-selecting function, while OE# be made a common  
connection to all devices in the array and connected to  
the READ line from the system control bus. This as-  
sures that all deselected memory devices are in their  
low-power standby mode and that the output pins are  
only active when data is desired from a particular mem-  
ory device.  
To obtain data at the device outputs, Chip Enable (CE#)  
and Output Enable (OE#) must be driven low. CE# con-  
trols the power to the device and is typically used to se-  
lect the device. OE# enables the device to output data,  
independent of device selection. Addresses must be  
stable for at least tACC–tOE. Refer to the Switching  
Waveforms section for the timing diagram.  
System Applications  
Standby Mode  
During the switch between active and standby condi-  
tions, transient current peaks are produced on the ris-  
ing and falling edges of Chip Enable. The magnitude of  
these transient current peaks is dependent on the out-  
put capacitance loading of the device. At a minimum, a  
0.1 µF ceramic capacitor (high frequency, low inherent  
inductance) should be used on each device between  
VCC and VSS to minimize transient effects. In addition,  
to overcome the voltage drop caused by the inductive  
effects of the printed circuit board traces on Express-  
ROM device arrays, a 4.7 µF bulk electrolytic capacitor  
should be used between VCC and VSS for each eight  
devices. The location of the capacitor should be close  
to where the power supply is connected to the array.  
The device enters the CMOS standby mode when CE#  
is at VCC ± 0.3 V. Maximum VCC current is reduced to  
100 µA. The device enters the TTL-standby mode  
when CE# is at VIH. Maximum VCC current is reduced  
to 1.0 mA. When in either standby mode, the device  
places its outputs in a high-impedance state, indepen-  
dent of the OE# input.  
Output OR-Tieing  
To accommodate multiple memory connections, a  
two-line control function provides:  
Low memory power dissipation, and  
Assurance that output bus contention will not occur.  
MODE SELECT TABLE  
Mode  
CE#  
OE#  
PGM#  
V
Outputs  
PP  
Read  
V
V
X
X
X
X
X
X
X
X
D
OUT  
IL  
IL  
Output Disable  
Standby (TTL)  
Standby (CMOS)  
X
V
High Z  
High Z  
High Z  
IH  
V
X
IH  
V
± 0.3 V  
X
CC  
Note:  
X = Either V or V .  
IH  
IL  
4
Am27X128